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diode-100v Datasheet PDF File

For diode-100v Found Datasheets File :: 9089 Search Time::1.781ms
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				ADPOW[Advanced Power Technology]
Part No.	APT5030AVR
OCR Text	... Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous S...100V VDS=250V 12 VDS=400V 8 16 1 0.5 4 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIG...
Description	POWER MOS V 500V 14.7A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.48K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5032CVR
OCR Text	... Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous S...100V VDS=250V 12 VDS=400V 8 16 1 0.5 4 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIG...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 14A 0.320 Ohm
File Size	60.85K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5040CNR
OCR Text	... ns nC 66 30 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous S...100V VDS=250V 20 TJ =+150C 10 5 TJ =+25C 12 8 VDS=400V 4 2 1 20 40 60 80 100 Qg...
Description	POWER MOS IV 500V 13.0A 0.400 Ohm N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	52.43K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50JVFR
OCR Text	...gnized" * Fast Recovery Body Diode * Lower Leakage * Faster Switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR...100V VDS=250V 16 100 50 TJ =+150C TJ =+25C 12 VDS=400V 8 10 5 4 200 400 600 ...
Description	POWER MOS V 500V 77A 0.050 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.13K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT50M50JVR
OCR Text	... Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous S...100V VDS=250V 16 100 50 TJ =+150C TJ =+25C 12 VDS=400V 8 10 5 4 200 400 600 ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 77A 0.050 Ohm
File Size	70.86K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M60JN
OCR Text	... Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous S...100V VDS=250V 16 12 VDS=400V 8 10 5 TJ =-55C 4 200 400 600 800 1000 Qg, TOTAL GATE...
Description	POWER MOS IV 500V 71A 0.060 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	60.22K / 4 Page	View it Online	Download Datasheet

				http:// ADPOW[Advanced Power Technology]
Part No.	APT8015JVFR APT8015
OCR Text	...gnized" * Fast Recovery Body Diode * Lower Leakage * Faster Switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR...100V VDS=250V VDS=400V TJ =+150C TJ =+25C 12 8 10 5 4 300 600 900 1200 1500 Qg,...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 44A 0.150 Ohm
File Size	77.92K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT8015 APT8015JVR
OCR Text	... Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous S...100V VDS=250V VDS=400V TJ =+150C TJ =+25C 12 8 10 5 4 300 600 900 1200 1500 Qg,...
Description	POWER MOS V 800V 44A 0.150 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	75.34K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8028JVR APT5010JVR
OCR Text	... Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous S...100V VDS=250V 12 VDS=400V 10 5 8 4 150 300 450 600 750 Qg, TOTAL GATE CHARGE (nC) ...
Description	POWER MOS V 800V 28A 0.280 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	71.26K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030B2VR
OCR Text	... Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous S...100V VDS=250V VDS=400V TJ =+150C TJ =+25C 12 8 10 5 4 100 200 300 400 500 600 Q...
Description	POWER MOS V 800V 27A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	58.13K / 4 Page	View it Online	Download Datasheet

For diode-100v Found Datasheets File :: 9089 Search Time::1.781ms
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