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  dicom Datasheet PDF File

For dicom Found Datasheets File :: 213    Search Time::4.734ms    
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    BT134

Suntac Electronic Corp.
Part No. BT134
OCR Text ...00 V; Tj = 95 C; IT(RMS) = 4 A; dicom/dt = 1.8 A/ms; gate open circuit ITM = 6 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s ... 100 MIN. ...F 50 TYP. 250 MAX. UNIT V/s dVcom/dt - - 50 - V/s tgt - - 2 - s...
Description Triacs logic level

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    STBT134T

SEMTECH ELECTRONICS LTD.
Part No. STBT134T
OCR Text ...0 V, TJ = 95 OC, IT(RMS) = 4 A, dicom/dt = 1.8 A/ms, gate open circuit Gate Controlled Turn On Time at ITM = 6 A, VD = VDRM max, IG = 0.1 A, dIG/dt = 5 A/s, IL 0.25 100 250 20 30 20 30 15 1.7 1.5 0.5 mA IGT 35 35 35 70 mA Symbol Min. Typ. M...
Description TRIAC

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    ACT108-600E

NXP Semiconductors
Part No. ACT108-600E
OCR Text ...j = 25 C IL IH VT VGT ID dVD/dt dicom/dt latching current holding current on-state voltage gate trigger voltage off-state current rate of rise of off-state voltage rate of change of commutating current clamping voltage VD = 12 V; IG = 12 mA...
Description    AC Thyristor power switch

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    ACT108W-600E

NXP Semiconductors
Part No. ACT108W-600E
OCR Text ...j = 25 C IL IH VT VGT ID dVD/dt dicom/dt latching current holding current on-state voltage gate trigger voltage off-state current rate of rise of off-state voltage rate of change of commutating current clamping voltage VD = 12 V; IG = 12 mA...
Description AC Thyristor power switch

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    BTA316-600ET

NXP Semiconductors
Part No. BTA316-600ET
OCR Text ... 150 C; see Figure 11 ID dVD/dt dicom/dt off-state current rate of rise of off-state voltage rate of change of commutating current VD = 600 V; Tj = 150 C VDM = 402 V; Tj = 150 C; exponential waveform VD = 400 V; Tj = 150 C; IT(RMS) = 16 A; ...
Description 16 A three-quadrant high commutation triac

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    BTA312-600D BTA312-600E BTA312-800E BTA3121

NXP Semiconductors
Part No. BTA312-600D BTA312-600E BTA312-800E BTA3121
OCR Text ...ymbol Parameter Max Min - dicom/dt rate of change of commutating current 1 1.5 4.5 - 2 - 3 6 10 - 2 - A/ms A/ms A/ms s 1.6 VGT VGT(25C) 1.2 001aab101 3 (1) 001aac669 IGT IGT(25C) 2 (2) (3) 0...
Description 12 A Three-quadrant triacs high commutation

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    BTA312B BTA312B-600CT BTA312B-800ET BTA312B1

NXP Semiconductors
Part No. BTA312B BTA312B-600CT BTA312B-800ET BTA312B1
OCR Text ...nit Max Min Symbol Parameter dicom/dt rate of change of commutating current 8 13 20 - 2 - 2 3.5 5 - 2 - A/ms A/ms A/ms s 1.6 VGT VGT(25C) 1.2 001aag168 3 IGT IGT(25C) 2 001aag165 (1) (2) (3) 0...
Description 12 A Three-quadrant triacs high commutation high temperature

File Size 74.02K  /  12 Page

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    BTA201W08 BTA201W-600E BTA201W-800E

NXP Semiconductors N.V.
Part No. BTA201W08 BTA201W-600E BTA201W-800E
OCR Text ...ristics Table 6. Symbol dVD/dt dicom/dt Dynamic characteristics Parameter rate of rise of off-state voltage rate of change of commutating current Conditions VDM = 0.67VDRM(max); Tj = 125 C; exponential waveform; gate open circuit VDM = 400...
Description 1 A Three-quadrant triacs high commutation
Logic level three-quadrant triac BTA201W-600E<SOT223 (SC-73)|<<http://www.nxp.com/packages/SOT223.html<1<Always Pb-free,;
Logic level three-quadrant triac BTA201W-800E<SOT223 (SOT223)|<<http://www.nxp.com/packages/SOT223.html<1<Always Pb-free,;

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    BT1308-400D BT1308-600D

NXP Semiconductors N.V.
Part No. BT1308-400D BT1308-600D
OCR Text ...(max); Tj = 50 C; ITM = 0.84 A; dicom/dt = 0.3 A/ms ITM = 1 A; VD = VDRM(max); IG = 25 mA; dIG/dt = 5 A/s 30 45 5 2 V/s V/s s 0.1 1 5 1 2 1 1.35 0.9 0.7 0.1 10 10 10 10 10 1.6 2 0.5 mA mA mA mA mA V V V mA 1 2 2 4 5 5 5 7 mA mA mA mA Min Ty...
Description Triacs logic level
4Q Triac

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    Z0103NA

NXP Semiconductors
Part No. Z0103NA
OCR Text ...gure 11 VD = 400 V; Tj = 110 C; dicom/dt = 0.44 A/ms; gate open circuit Dynamics charateristics 10 0.5 V/s V/s Min 0.2 Typ 1.3 Max 3 3 3 5 7 7 7 7 7 1.6 1.3 0.5 Unit mA mA mA mA mA mA mA mA mA V V V mA Static characteristics 4 IGT IGT...
Description Logic level four-quadrant triac

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