|
|
 |
List of Unclassifed Manufac...
|
Part No. |
R222508300
|
OCR Text |
... solder procedure 1. deposition of solder paste sn ag4 cu0.5 on mounti ng zone by screen printing application. we recommend a low residue flux. we advise a thickness of 150 m. verify that the ed ges of the zone are clean. 2... |
Description |
MALE STRAIGHT RECEPTACLE FOR PCB SMT TYPE - LIMITED DETENT - REEL 500
|
File Size |
569.74K /
6 Page |
View
it Online |
Download Datasheet
|
|
|
 |
CREE POWER
|
Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
|
OCR Text |
...ctronic devices ? iii-v nitride deposition physical properties polytype single crystal 4h single crystal 6h crystal structure hexagonal hexagonal bandgap 3.26 ev 3.03 ev thermal conductivity (typical range) 3.0-3.8 w/cm ? k @ 298k (2.3-2.8 ... |
Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
File Size |
273.34K /
17 Page |
View
it Online |
Download Datasheet
|
|
|
 |
List of Unclassifed Man...
|
Part No. |
R210408012
|
OCR Text |
...e in industrial environment 1 ? deposition of solder paste sn ag4 cu0.5 on mounting zone by screen printing application. we recommend a low residue solid flux. we advise a thickness of 200 microns (7.800 microinches). verify that the edges ... |
Description |
STRAIGHT JACK RECEPTACLE FOR PCB SMT TYPE - GOLD 0.2 - REEL OF 100
|
File Size |
396.21K /
4 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|