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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
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| Part No. |
APT200GN60JDQ4
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| OCR Text |
... junction temperature.
2 For combi devices, Ices includes both IGBT and FRED leakages
3-2005 Rev B 050-7611
3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commu... |
| Description |
IGBT
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| File Size |
522.41K /
9 Page |
 View
it Online |
Download Datasheet
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Advanced Power Technology Ltd.
http://
ADPOW[Advanced Power Technology]
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| Part No. |
APT200GN60J
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| OCR Text |
...ximum junction temperature. For combi devices, ICES includes both IGBT and FRED leackage. See MIL-STD-750 Method 3471. Eon1 is the clamped inductive tun-on energy of the IGBT only, without the effect of a commutating diode reverse recovery ... |
| Description |
Intergrated Gate Resistor: Low EMI, High Reliability
MOSFET
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| File Size |
197.17K /
6 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT30GP60JDQ1
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| OCR Text |
...mum junction temperature. 2 For combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse reco... |
| Description |
POWER MOS 7 IGBT
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| File Size |
454.07K /
9 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT30GT60BRDQ2G APT30GT60BRDQ2
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| OCR Text |
...mum junction temperature. 2 For combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recov... |
| Description |
Thunderbolt IGBT
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| File Size |
432.89K /
9 Page |
View
it Online |
Download Datasheet |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT40GF120JRDQ2
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| OCR Text |
... junction temperature.
2 For combi devices, Ices includes both IGBT and diode leakages
5-2006 Rev B 052-6285
3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a comm... |
| Description |
FAST IGBT & FRED
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| File Size |
572.02K /
9 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT40GP90B
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| OCR Text |
...mum junction temperature. 2 For combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recov... |
| Description |
POWER MOS 7 IGBT
|
| File Size |
162.08K /
6 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
Advanced Power Electronics, Corp.
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| Part No. |
APT40GP90J
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| OCR Text |
...mum junction temperature. 2 For combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recov... |
| Description |
MOSFET
POWER MOS 7 IGBT
68 A, 900 V, N-CHANNEL IGBT ISOTOP-4
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| File Size |
170.48K /
6 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT50GF120JRDQ3
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| OCR Text |
...mum junction temperature. 2 For combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recov... |
| Description |
FAST IGBT & FRED
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| File Size |
447.54K /
9 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT50GN60BG APT50GN60B
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| OCR Text |
...mum junction temperature. 2 For combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recov... |
| Description |
IGBT
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| File Size |
290.38K /
6 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
|
| Part No. |
APT50GT120JRDQ2
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| OCR Text |
...mum junction temperature. 2 For combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recov... |
| Description |
Thunderbolt IGBT
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| File Size |
448.35K /
9 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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