| |
|
 |
Samsung Electronic
|
| Part No. |
K4S510732C
|
| OCR Text |
....2001 the k4s510732c is 536,870,912 bits synchronous high data rate dynamic ram organized as 4 x 16,777,216 words by 8 bits, fabri- cated wi...1mhz, v ref =1.4v 200 mv) pin symbol min max unit note clock c clk 5.0 9.0 pf ras, cas, we, dq... |
| Description |
16M x 8Bit x 4 Banks Synchronous DRAM Data Sheet
|
| File Size |
66.59K /
9 Page |
View
it Online |
Download Datasheet
|
| |
|
 |

Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
| Part No. |
K4M51323LE-F1L K4M51323LE-L K4M51323LE-M K4M51323LE-MC K4M51323LE-EL800
|
| OCR Text |
...TION
The K4M51323LE is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with...1MHz, VREF =0.9V 50 mV)
Pin Clock RAS, CAS, WE, CS, CKE DQM Address DQ0 ~ DQ31 Symbol CCLK CIN CIN... |
| Description |
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM
|
| File Size |
138.94K /
12 Page |
View
it Online |
Download Datasheet
|
| |
|
 |

Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
| Part No. |
K4M513233E K4M513233E-F1H K4M513233E-F1L K4M513233E-F75 K4M513233E-L K4M513233E-MC K4M513233E-MEC K4M513233E-MC1L0
|
| OCR Text |
...TION
The K4M513233E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with...1MHz, VREF =0.9V 50 mV)
Pin Clock RAS, CAS, WE, CS, CKE DQM Address DQ0 ~ DQ31 Symbol CCLK CIN CIN... |
| Description |
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM
|
| File Size |
138.60K /
12 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|