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  912.1mhz Datasheet PDF File

For 912.1mhz Found Datasheets File :: 148    Search Time::2.375ms    
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    Samsung Electronic
Part No. K4S510732C
OCR Text ....2001 the k4s510732c is 536,870,912 bits synchronous high data rate dynamic ram organized as 4 x 16,777,216 words by 8 bits, fabri- cated wi...1mhz, v ref =1.4v 200 mv) pin symbol min max unit note clock c clk 5.0 9.0 pf ras, cas, we, dq...
Description 16M x 8Bit x 4 Banks Synchronous DRAM Data Sheet

File Size 66.59K  /  9 Page

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    BB102M

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. BB102M
OCR Text ...0.969 0.954 0.948 0.933 0.923 0.912 0.892 0.882 0.868 0851 0.834 0.815 0.801 0.788 0.768 ANG -2.9 -6.0 -9.4 -12.4 -15.4 -18.4 -21.5 -24.6 -27.5 -30.7 -33.6 -36.3 -39.3 -42.0 -45.0 -47.7 -50.6 -53.5 -55.9 -58.5 S21 MAG 2.22 2.21 2.21 2.19 2....
Description Build in Biasing Circuit MOS FET IC UHF RF Amplifier

File Size 63.38K  /  11 Page

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    K4M51323LE-F1L K4M51323LE-L K4M51323LE-M K4M51323LE-MC K4M51323LE-EL800

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4M51323LE-F1L K4M51323LE-L K4M51323LE-M K4M51323LE-MC K4M51323LE-EL800
OCR Text ...TION The K4M51323LE is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with...1MHz, VREF =0.9V 50 mV) Pin Clock RAS, CAS, WE, CS, CKE DQM Address DQ0 ~ DQ31 Symbol CCLK CIN CIN...
Description 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM

File Size 138.94K  /  12 Page

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    EM42BM1684RTC-5FE EM42BM1684RTC-6F EM42BM1684RTC-6FE

Eorex Corporation
Part No. EM42BM1684RTC-5FE EM42BM1684RTC-6F EM42BM1684RTC-6FE
OCR Text ...cmos process containing 536,870,912 bits which organized as 8meg words x 4 banks by 16 bits. the 512mb ddr sdram uses double data rate ar...1mhz, t a =25c) symbol parameter min. typ. max. units c clk clock capacitance(clk,/c...
Description VDD/VDDQ= 2.5V ± 0.2V

File Size 471.31K  /  23 Page

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    K4M51163PC-X

Samsung semiconductor
Part No. K4M51163PC-X
OCR Text ...e). the k4m51163pc is 536,870,912 bits synchronous high data rate dynamic ram organized as 4 x 8,388,608 words by 16 bits, fabricated with...1mhz, v ref =0.9v 50 mv) pin symbol min max unit note clock c clk 1.5 3.0 pf ras , cas , we , cs...
Description 8M x 16Bit x 4 Banks Mobile SDRAM

File Size 153.28K  /  12 Page

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    K4M513233E K4M513233E-F1H K4M513233E-F1L K4M513233E-F75 K4M513233E-L K4M513233E-MC K4M513233E-MEC K4M513233E-MC1L0

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4M513233E K4M513233E-F1H K4M513233E-F1L K4M513233E-F75 K4M513233E-L K4M513233E-MC K4M513233E-MEC K4M513233E-MC1L0
OCR Text ...TION The K4M513233E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with...1MHz, VREF =0.9V 50 mV) Pin Clock RAS, CAS, WE, CS, CKE DQM Address DQ0 ~ DQ31 Symbol CCLK CIN CIN...
Description 16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM

File Size 138.60K  /  12 Page

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    VN772KTR-E

STMicroelectronics
Part No. VN772KTR-E
OCR Text ...5v; v ds =13v; t j =125c 6 6.5 912 12 a a t dlim step response current limit v in =5v; v ds =13v 4.0 m s t jsh overtemperature shutdo...1mhz vin=0v 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25 vin(v) 0 200 400 600 800 1000 1200 1400 1600 t(ns) ...
Description QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS

File Size 223.03K  /  21 Page

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    K4S511533F-YF

Samsung semiconductor
Part No. K4S511533F-YF
OCR Text ...res the k4s511533f is 536,870,912 bits synchronous high data rate dynamic ram organized as 4 x 8,388,608 words by 16 bits, fabricated with...1mhz, v ref =0.9v 50 mv) pin symbol min max unit note clock c clk 3.0 6.0 pf ras , cas , we , ck...
Description 8M x 16Bit x 4 Banks Mobile SDRAM

File Size 136.12K  /  12 Page

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For 912.1mhz Found Datasheets File :: 148    Search Time::2.375ms    
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