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Mitsubishi
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Part No. |
M6MGB166S2BWG
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OCR Text |
...URES * Access time Flash Memory 90ns (Max.) SRAM 85ns (Max.) * Supply voltage Vcc=2.7 ~ 3.6V * Ambient temperature I version Ta=-40 ~ 85C * Package : 72-pin S-CSP , 0.8mm ball pitch
APPLICATION Mobile communication products
PIN CONFIG... |
Description |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
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File Size |
256.61K /
30 Page |
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it Online |
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SGS Thomson Microelectronics
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Part No. |
AN1427
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OCR Text |
... adsp-21061-40 mhz and psd813f5-90ns. three wait states are required to access the program flash memory and i/o in the psd813f5 during normal program execution. all calculations are based on the /rd, /wr, /bms and /ms0 bus interface sign... |
Description |
INTERFACING THE PSD813F5 WITH ADSP-21061 SHARC DSP
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File Size |
130.91K /
22 Page |
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it Online |
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Excel Semiconductor
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Part No. |
EX29DL320
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OCR Text |
...ANCE
* Read access time - 70ns/90ns for normal Vcc range ( 2.7V ~ 3.6V ) * Program and erase time - Program time : 6us/byte, 8us/word ( typical ) - Accelerated program time : 4us/word ( typical ) - Sector erase time : 0.7sec/sector ( typic... |
Description |
Simultaneous Operation Flash Memory
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File Size |
864.65K /
59 Page |
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it Online |
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意法半导
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Part No. |
M29W400T
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OCR Text |
...ad operations fast access time: 90ns fast programming time 10 m s by byte / 16 m s by word typical program/erase controller (p/e.c.) program byte-by-byte or word-by-word status register bits and ready/busy output memory blocks boot block... |
Description |
4Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory(4M位闪速存储器)
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File Size |
32.22K /
4 Page |
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it Online |
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Excel Semiconductor
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Part No. |
ES29LV160D
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OCR Text |
... ? read access time - 90ns/120n for normal vcc range ( 2.7v - 3.6v ) - 80ns for regulated vcc range ( 3.0v - 3.6v ) ? program and erase time - program time : 5us/byte, 7us/word ( typical ) - sector erase time : 0.7sec/... |
Description |
16Mbit CMOS
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File Size |
644.38K /
57 Page |
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it Online |
Download Datasheet
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Price and Availability
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