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Samsung semiconductor International Rectifier Intersil Corporation
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Part No. |
IRF9150
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OCR Text |
... = -10A, VGS = -10V (Figures 8, 9) VDS = -10V, ID = -12.5 (Figure 12) VDD = -50V, ID -25A, RG = 6.8, RL = 2.0, (Figures 17, 18) MOSFET Swit...11)
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Internal Source Inductance
LS
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13
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nH
Thermal Resistance Junction to... |
Description |
-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
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File Size |
56.86K /
7 Page |
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IRF[International Rectifier]
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Part No. |
IRF9230 JANTXV2N6806 JANTX2N6806
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OCR Text |
... d(off)
tf
VGS 10%
Fig 9. Maximum Drain Current Vs. Case Temperature
90% VDS
Fig 10b. Switching Time Waveforms
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
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V DD
5
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Description |
TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) CAP CER 250VAC 82PF 5% SL 1808 6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
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File Size |
148.64K /
7 Page |
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INTERSIL[Intersil Corporation]
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Part No. |
IRF9520 FN2281
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OCR Text |
... 0V TC = 125oC MIN -100 -2 -6 0.9 VGS = -10V, ID = -6A, VDS = 0.8 x Rated BVDSS (Figure 14) Gate Charge is Essentially Independent of Operating Temperature VDS = -25V, VGS = 0V, f = 1MHz (Figure 11) Measured From the Modified MOSFET Contact... |
Description |
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
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File Size |
57.36K /
7 Page |
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it Online |
Download Datasheet
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Price and Availability
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