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Motorola, Inc.
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| Part No. |
MCM63P636 P636ZP225R
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| OCR Text |
...8e, 2g, 8g, 2j, 8j, 2l, 8l, 2n, 8n, 2r, 8r, 2u, 8u v ddq supply i/o power supply. 1a, 9a, 1c, 3c, 7c, 9c, 1e, 4e, 5e, 6e, 9e, 1g, 4g, 6g, 9g...bit no. signal name bump id 1 dqa 3d 2 dqa 1b 3 dqa 2b 4 dqa 1d 5 dqa 2d 6 dqa 1f 7 dqa 2f 8 dqa 1h ... |
| Description |
64K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
Circular Connector; Body Material:Aluminum; Series:PT07; No. of Contacts:5; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Jam Nut Receptacle; Circular Contact Gender:Socket; Insert Arrangement:18-5
Circular Connector; Body Material:Aluminum; Series:PT07; Number of Contacts:5; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Jam Nut Receptacle; Circular Contact Gender:Pin; Insert Arrangement:18-5
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| File Size |
334.69K /
27 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K7R321884M K7R323684M K7R323684M-FC16 K7R321884M-FC16
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| OCR Text |
...6f,6g,6h,6j,6k,5l-7l,4m, 8m,4n,8n ground tms 10r jtag test mode select tdi 11r jtag test data input tck 2r jtag test clock tdo 1r jtag test...bit sequential for both read and write operations, reguiring tow full clock bus cycles. any request ... |
| Description |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
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| File Size |
197.54K /
18 Page |
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Samsung semiconductor
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| Part No. |
K7J323682C K7J321882C
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| OCR Text |
...,6f,6g,6h,6j,6k,5l-7l,4m, 8m,4n,8n ground tms 10r jtag test mode select tdi 11r jtag test data input tck 2r jtag test clock tdo 1r jtag test...bit sequential for both read and write operations . synchronous pipeline read and late wr ite enable... |
| Description |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM
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| File Size |
410.17K /
18 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K7Q163664B-FC16 K7Q161864B-FC16
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| OCR Text |
..., 6f,6g,6h,6j,6k,5l-7l,4m-8m,4n,8n ground tms 10r jtag test mode select tdi 11r jtag test data input tck 2r jtag test clock tdo 1r jtag test...bit sequential for both read and write operations, reguiring tow full clock bus cycles . any request... |
| Description |
512Kx36 & 1Mx18 QDR TM b4 SRAM
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| File Size |
347.73K /
17 Page |
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IBM Microeletronics
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| Part No. |
IBMN625804GT3B IBMN625404GT3B
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| OCR Text |
...266a (7n) ddr266b (75n) ddr200 (8n) 2 133 100 100 2.5 143 133 125 * values are nominal (exact t ck should be used).
ibmn625404gt3b ibmn62...bit for read/write commands, to select one location out of the memory array in the respective bank. ... |
| Description |
256Mb Double Data Rate Synchronous DRAM(256M位双数据速率同步动态RAM)
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| File Size |
1,025.63K /
79 Page |
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Integrated Silicon Solution, Inc.
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| Part No. |
IS61DDB21M36-250M3 IS61DDB22M18-250M3
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| OCR Text |
...j, 6k, 5l, 6l, 7l, 4m, 8m, 4n, 8n power supply. zq 11h output driver impedance control. tms, tdi, tck 10r, 11r, 2r ieee 1149.1 test inputs ...bit linear; that is, when first address is a0+0, next internal burst address is a0+1 . 2. read ref... |
| Description |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
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| File Size |
414.47K /
25 Page |
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Integrated Silicon Solution, Inc.
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| Part No. |
IS61DDB41M36-250M3 IS61DDB42M18-250M3
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| OCR Text |
...j, 6k, 5l, 6l, 7l, 4m, 8m, 4n, 8n power supply. zq 11h output driver impedance control. tms, tdi, tck 10r, 11r, 2r ieee 1149.1 test inputs ...bit linear; that is, when first address is a0+0, next internal burst address is a0+ 1. 2. read ref... |
| Description |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
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| File Size |
453.63K /
26 Page |
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SIEMENS AG
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| Part No. |
SDA9205
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| OCR Text |
...,2,1 arbitrarily (2.3) b 8n = 1/8 (b 8n C 7 + b 8n C 6 + ..... + b 8n ), b 8n C 7,6,5,4,3,2,1 arbitrarily (2.0) g n = c n C 3 adc...bit data a a7 a6 a5 a4 a3 a2 a1 a0 a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a... |
| Description |
Triple 8-Bit Analog-to-Digital-Converter(三A/D转换
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| File Size |
567.01K /
31 Page |
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it Online |
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Price and Availability
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