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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT8014L2FLLG APT8014L2FLL
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| OCR Text |
800v
52A
0.16
APT8014L2FLL
*G
APT8014L2FLLG*
Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7
(R)
R
FREDFET
TO-264 Max
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhanceme... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
234.95K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT8014JLL_03 APT8014JLL APT8014JLL03
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| OCR Text |
800v 42A 0.140
POWER MOS 7
(R)
R
MOSFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
91.89K /
5 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT8011JLL_04 APT8011JLL APT8011JLL04
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| OCR Text |
800v 51A 0.110
POWER MOS 7
(R)
R
MOSFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
108.41K /
5 Page |
View
it Online |
Download Datasheet |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT7M120S APT7M120B
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| OCR Text |
...F
5
VGS = 0V, VDS = 0V to 800v
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 3A,... |
| Description |
N-Channel MOSFET
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| File Size |
249.66K /
4 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT75GP120J
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| OCR Text |
...shutoff
* 50 kHz operation @ 800v, 20A * 20 kHz operation @ 800v, 44A * RBSOA rated
G
C
E
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Em... |
| Description |
MOSFET
POWER MOS 7 IGBT
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| File Size |
101.25K /
6 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT75GP120B2
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| OCR Text |
...hutoff
* 100 kHz operation @ 800v, 20A * 50 kHz operation @ 800v, 38A * RBSOA rated
E
C G E
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-E... |
| Description |
MOSFET
POWER MOS 7 IGBT
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| File Size |
94.63K /
6 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT60D120SG APT60D120B APT60D120B_05 APT60D120BG APT60D120S APT60D120B05
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| OCR Text |
...F = 60A, diF/dt = -1000A/s VR = 800v, TC = 125C IF = 60A, diF/dt = -200A/s VR = 800v, TC = 125C IF = 60A, diF/dt = -200A/s VR = 800v, TC = 25C Test Conditions IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C MIN -
APT60D120B(G)_S(G)
TYP MA... |
| Description |
60 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
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| File Size |
128.54K /
4 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT50GT120JRDQ2
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| OCR Text |
...Inductive Switching (25C) VCC = 800v VGE = 15V I C = 50A
150 23 50 215 26 3585 4835 1910 23 50 255 50 3580 6970 2750
A
ns
RG = 1.0 7 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC = 800v ... |
| Description |
Thunderbolt IGBT
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| File Size |
448.35K /
9 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT50GF120JRDQ3
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| OCR Text |
...Inductive Switching (25C) VCC = 800v VGE = 15V RG = 1.0 I C = 75A VGE = 15V MIN TYP MAX UNIT pF V nC
5320 555 300 10.0 495 50 290 225 36 70 355 65 7965 9895 4340 36 70 410 110 7890 14110 6040 J
ns ns A
Gate-Emitter Charge Gate-Collec... |
| Description |
FAST IGBT & FRED
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| File Size |
447.54K /
9 Page |
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it Online |
Download Datasheet |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT4M120K
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| OCR Text |
...F
5
VGS = 0V, VDS = 0V to 800v
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 2A,... |
| Description |
N-Channel MOSFET
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| File Size |
240.23K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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