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  8-fbga Datasheet PDF File

For 8-fbga Found Datasheets File :: 5810    Search Time::6.344ms    
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    K1S321611C K1S321611C-FI70 K1S321611C-I

Samsung Semiconductor Co., Ltd.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K1S321611C K1S321611C-FI70 K1S321611C-I
OCR Text ...r Byte(I/O9~16) Lower Byte(I/O1~8) No Connection1) I/O1~I/O16 Data Inputs/Outputs 1) Reserved for future use. SAMSUNG ELECTRONICS CO....FBGA, 70ns, 2.9V UtRAM RECOMMENDED DC OPERATING CONDITIONS1) Item Supply voltage Ground Input...
Description 2Mx16 bit Uni-Transistor Random Access Memory 2Mx16位统一晶体管随机存取存储器

File Size 178.12K  /  10 Page

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    K1S32161CC K1S32161CC-FI70 K1S32161CC-I

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K1S32161CC K1S32161CC-FI70 K1S32161CC-I
OCR Text ...r Byte(I/O9~16) Lower Byte(I/O1~8) No Connection1) LB CS1,CS2 Chip Select Inputs OE WE A0~A20 Output Enable Input Write Enable Input A...FBGA, 70ns, 2.9V UtRAM RECOMMENDED DC OPERATING CONDITIONS1) Item Supply voltage Ground Input...
Description 2Mx16 bit Page Mode Uni-Transistor Random Access Memory

File Size 184.44K  /  10 Page

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    K1S3216B1C K1S3216B1C-I

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K1S3216B1C K1S3216B1C-I
OCR Text ...from 48 TBGA into 48 FBGA 6.0 x 8.0 - Changed Standby Current(CMOS) from 80uA to 100uA Draft Date January 16, 2003 June 9, 2003 Remark Advanced Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Elec...
Description 2Mx16 bit Uni-Transistor Random Access Memory

File Size 179.11K  /  10 Page

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    K4M513233E K4M513233E-F1H K4M513233E-F1L K4M513233E-F75 K4M513233E-L K4M513233E-MC K4M513233E-MEC K4M513233E-MC1L0

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4M513233E K4M513233E-F1H K4M513233E-F1L K4M513233E-F75 K4M513233E-L K4M513233E-MC K4M513233E-MEC K4M513233E-MC1L0
OCR Text ...& 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). * EMRS cycle with address key programs. * All input...FBGA with 0.8mm ball pitch ( -MXXX : Leaded, -EXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPT...
Description 16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM

File Size 138.60K  /  12 Page

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    K4M51323LE-F1L K4M51323LE-L K4M51323LE-M K4M51323LE-MC K4M51323LE-EL800

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4M51323LE-F1L K4M51323LE-L K4M51323LE-M K4M51323LE-MC K4M51323LE-EL800
OCR Text ...& 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). * EMRS cycle with address key programs. * All input...FBGA with 0.8mm ball pitch ( -MXXX : Leaded, -EXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPT...
Description 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM

File Size 138.94K  /  12 Page

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    LRS1341 LRS1342

SHARP[Sharp Electrionic Components]
Part No. LRS1341 LRS1342
OCR Text ...ating current (MAX.): - 45 mA - 8 mA (tRC, tWC = 1 s) - Standby current: 45 A (MAX.) - Data retention current: 35 A (MAX.) DESCRIPTION T...FBGA INDEX TOP VIEW 1 A B C D E F G H NC NC 2 NC 3 NC A16 F-WE 4 A11 A8 F-RY/ BY 5 ...
Description Stacked Chip 16M Flash Memory and 2M SRAM

File Size 195.04K  /  24 Page

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    M36W432BG M36W432BG70ZA1T M36W432BG70ZA6T M36W432BG85ZA1T M36W432BG85ZA6T M36W432BGZA M36W432TG M36W432TG70ZA1T M36W432T

STMICROELECTRONICS[STMicroelectronics]
Part No. M36W432BG M36W432BG70ZA1T M36W432BG70ZA6T M36W432BG85ZA1T M36W432BG85ZA6T M36W432BGZA M36W432TG M36W432TG70ZA1T M36W432TG70ZA6T M36W432TG85ZA1T M36W432TG85ZA6T M36W432TGZA M36W432TG-ZAT M36W432
OCR Text ... s Stacked LFBGA66 (ZA) 12 x 8 mm PROGRAMMING TIME - 10s typical - Double Word Programming Option - Quadruple Word Programming Option s BLOCK LOCKING - All blocks locked at Power up - Any combination of blocks can be locked - WP...
Description 32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

File Size 436.55K  /  66 Page

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    M36W432 M36W432B M36W432B70ZA1T M36W432B70ZA6T M36W432B85ZA1T M36W432B85ZA6T M36W432BZA M36W432T M36W432T70ZA1T M36W432T

STMICROELECTRONICS[STMicroelectronics]
Part No. M36W432 M36W432B M36W432B70ZA1T M36W432B70ZA6T M36W432B85ZA1T M36W432B85ZA6T M36W432BZA M36W432T M36W432T70ZA1T M36W432T70ZA6T M36W432T85ZA1T M36W432T85ZA6T M36W432TZA M36W432-ZAT
OCR Text ... 32 Mbit (2Mb x16) BOOT BLOCK - 8 x 4 KWord Parameter Blocks (Top or Bottom Location) FBGA s PROGRAMMING TIME - 10s typical - Double Word Programming Option Stacked LFBGA66 (ZA) 8 x 8 ball array s BLOCK LOCKING - All blocks lo...
Description 32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

File Size 415.73K  /  57 Page

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    MB86831 MB86831-80PFV MB86831PFV MB86832 MB86832-100PFV MB86832-66PFV MB86833 MB86833PMT2 MB86834 MB86834-120PFV MB86834

FUJITSU[Fujitsu Media Devices Limited]
Part No. MB86831 MB86831-80PFV MB86831PFV MB86832 MB86832-100PFV MB86832-66PFV MB86833 MB86833PMT2 MB86834 MB86834-120PFV MB86834PFV MB86835 MB86835PMT2 MB86836 MB86836-108PBT MB86836-108PMT2 MB86836PBT MB86836PMT2 MB86832-80PFV
OCR Text ...gister :136 / register window : 8 * Instruction cash The entry lock function is supported * Data cache No cash controlling function supported The entry lock function is supported * BIU (bus interface unit) Purifetchi baffa :1 Write buffer :...
Description 32-bit Embedded Controller

File Size 460.58K  /  82 Page

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    MICRON
Part No. MT58L256L3 MT58L256L32D
OCR Text 8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM 8Mb SYNCBURSTTM SRAM FEATURES * * * * * * * * * * * * * * * Fast c...FBGA package Low capacitive bus loading x18, x32, and x36 versions available MT58L512L18D, MT58L2...
Description 8Mb Syncburst SRAM, 3.3V Vdd, 3.3V I/O, Pipelined, Dcd,

File Size 407.50K  /  26 Page

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