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White Electronic Designs Corporation
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Part No. |
EDI2CG272128V9D1 EDI2CG272128V12D1 EDI2CG272128V15D1 EDI2CG272128V85D1 EDI2CG272128V-D1
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Description |
2x128Kx72, 3.3V s nc/s nc burst Flow-Through(2x128Kx72, 3.3Vns,同步/同步脉冲静态RAM模块(流通结构)) 2x128Kx72, 3.3V s nc/s nc burst Flow-Through(2x128Kx72, 3.3V2ns,同步/同步脉冲静态RAM模块(流通结构)) 2x128Kx72, 3.3V s nc/s nc burst Flow-Through(2x128Kx72, 3.3V5ns,同步/同步脉冲静态RAM模块(流通结构)) 2x128Kx72.3Vs数控/ s的数控突发流量通过x128Kx72.3伏,15纳秒,同同步脉冲静态内存模块(流通结构) 2x128Kx72.3Vs数控/ s的数控突发流量通过x128Kx72.3伏,12ns,同同步脉冲静态内存模块(流通结构) 2x128Kx72.3Vs数控/ s的数控突发流量通过x128Kx72.3伏,纳秒,同同步脉冲静态内存模块(流通结构) ssRAM Modules 的ssRAM模块 2x128Kx72, 3.3V sync/sync burst Flow-Through(2x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块(流通结构)) 2x128Kx72.3同步/同步突发流量通过2x128Kx72.3伏,8.5ns,同同步脉冲静态内存模块(流通结构) 2x128Kx72, 3.3V sync/sync burst Flow-Through(2x128Kx72, 3.3V锛?.5ns,???/?????????RAM妯″?(娴??缁??锛?
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File Size |
172.76K /
11 Page |
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Cypress semiconductor, Corp. CYPREss sEMICONDUCTOR CORP
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Part No. |
CY7C1415BV18-250BZI CY7C1415BV18-167BZI
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Description |
36-Mbit QDR(TM)-II sRAM 4-Word burst Architecture; Architecture: QDR-II, 4 Word burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 1M X 36 QDR sRAM, 0.45 ns, PBGA165 36-Mbit QDR™-II sRAM 4-Word burst Architecture
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File Size |
956.33K /
30 Page |
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ETC Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers List of Unclassifed Man...
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Part No. |
Gs832218B-133 Gs832218B-133I Gs832218B-150 Gs832218B-150I Gs832218B-166 Gs832218B-166I Gs832218B-200 Gs832218B-200I Gs832218B-225 Gs832218B-225I Gs832218B-250 Gs832218B-250I Gs832272C-133 Gs832272C-133I Gs832272C-150 Gs832272C-150I Gs832272C-166 Gs832272C-166I Gs832272C-200 Gs832272C-200I Gs832272C-225 Gs832272C-225I Gs832218 Gs832218B Gs832218E Gs832218E-133 Gs832218E-133I Gs832218E-150 Gs832218E-150I Gs832218E-166 Gs832218E-166I Gs832218E-200 Gs832218E-225 Gs832218E-225I Gs832218E-250 Gs832218E-250I Gs832236 Gs832236B Gs832236B-133 Gs832236E-133 Gs832236E-133I Gs832236E-150 Gs832236E-150I Gs832236E-166 Gs832236E-166I Gs832236E-200 Gs832236E-200I Gs832236E-225 Gs832236E-225I Gs832236E-250 Gs832236E-250I Gs832236B-250 Gs832236B-200 Gs832236B-133I Gs832236B-166 Gs832236B-225 Gs832236B-150 Gs832236B-200I Gs832236B-225I Gs832236B-150I Gs832236B-166I Gs832236B-250I Gs832272 Gs832272C-250 Gs832272C-250I
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Description |
64K 3.3 VOLT sERIAL CONFIGURATION PROM 200万1800万36,为512k × 72分配36MB的s /双氰胺同步突发静态存储器 GIGABAsE 350 CAT5E PATCH 1 FT, sNAGLEss, WHITE 200万1800万36,为512k × 72分配36MB的s /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb s/DCD sync burst sRAMs 200万18100万36,为512k × 72分配36MB的s /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb s/DCD sync burst sRAMs 200万1800万36,为512k × 72分配36MB的s /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb s/DCD sync burst sRAMs 200万1800万36,为512k × 72分配36MBs /双氰胺同步突发静态存储器 DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35 (Gs832218 / Gs832236 / Gs832272) s/DCD sync burst sRAMs
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File Size |
833.90K /
41 Page |
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Alliance semiconductor, Corp. ALsC[Alliance semiconductor Corporation]
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Part No. |
As7C3364PFs36A-166TQI As7C3364PFs32A As7C3364PFs32A-100TQC As7C3364PFs32A-100TQI As7C3364PFs32A-133TQC As7C3364PFs32A-133TQI As7C3364PFs32A-150TQC As7C3364PFs32A-150TQI As7C3364PFs32A-166TQC As7C3364PFs32A-166TQI As7C3364PFs36A As7C3364PFs36A-100TQC As7C3364PFs36A-100TQI As7C3364PFs36A-133TQC As7C3364PFs36A-133TQI As7C3364PFs36A-150TQC As7C3364PFs36A-150TQI As7C3364PFs36A-166TQC
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Description |
3.3V 64K X 32/36 pipeline burst synchronous sRAM 64K X 36 sTANDARD sRAM, 9 ns, PQFP100 3.3V 64K X 32/36 pipeline burst synchronous sRAM 64K X 36 sTANDARD sRAM, 10 ns, PQFP100 3.3V 64K X 32/36 pipeline burst synchronous sRAM 64K X 32 sTANDARD sRAM, 10 ns, PQFP100 DIODE ZENER sINGLE 1000mW 16Vz 15.5mA-Izt 0.05 5uA-Ir 12.2Vr DO41-GLAss 5K/REEL 64K X 36 sTANDARD sRAM, 12 ns, PQFP100 3.3V 64K X 32/36 pipeline burst synchronous sRAM 64K X 32 sTANDARD sRAM, 12 ns, PQFP100
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File Size |
216.30K /
11 Page |
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it Online |
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Price and Availability
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