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DAESAN[Daesan Electronics Corp.]
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| Part No. |
1N4937 1N4933 1N4934 1N4935 1N4936
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| OCR Text |
...GE FORWARD CURRENT(A) 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( E )
SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR I...8mH/1.4W
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
R1
115Va 60Hz
10K 2W
3 7
30W 50W NO... |
| Description |
CURRENT 1.0 Ampere VOLTAGE 50 to 600 Volts
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| File Size |
170.41K /
2 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SK3043
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| OCR Text |
...e Tj (C)
ID VDS
8 TC=25C 7 6 5 4 3 2 5V 1 0 0 10 20 30 40 50 60 50W 4.5V 0 0 2 5.5V VGS=15V 10V 6.5V 6V 8 10
ID VGS
6 VDS=25V
Vth TC
VDS=25V ID=1mA 5
Gate threshold voltage Vth (V)
12
Drain current ID (A)
Drain curr... |
| Description |
Silicon N-Channel Power F-MOS FET
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| File Size |
44.70K /
3 Page |
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it Online |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
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| Part No. |
APT10090SFLL APT10090BFLL APT10090BFLL_03 APT10090BFLL03
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| OCR Text |
...DD = 500V ID = 12A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 670V, VGS = 15V ID = 12A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 670V...8mH, RG = 25, Peak IL = 12A 5 dv/dt numbers reflect the limitations of the test circuit rather than ... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
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| File Size |
94.01K /
5 Page |
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DELTA[Delta Electronics, Inc.]
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| Part No. |
DT32-2039AT DT32-2010T DT32-2014T DT32-2023AT
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| OCR Text |
6 6 5
DT32-2010T DT32-2023AT DT32-2039AT DT32-2014T
DT32-20XXXX DELTAXXXX
A B
10 9 8
F
10 9
D
8 7 6
TINNED CP WIRE
0...8mH Min. @10KHz 0.1V SEC: 7.5uH Max. @100KHz 0.1V PRI: 2.20 SEC: 2.20 Max. Max. DT32-2014T (PRI:SEC)... |
| Description |
ADSL TRANSFORMER
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| File Size |
57.23K /
1 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQA19N20C
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| OCR Text |
...--------
15 150 135 115 40.5 6.0 22.5
40 310 280 240 53.0 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximu...8mH, IAS = 19.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 21.8A, di/dt 300A/s, VDD BVDSS, S... |
| Description |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
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| File Size |
868.89K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQA7N65C
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| OCR Text |
...
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V Bottom: 5.0 V Top :
Figure 2. Transfer Characteristics
10
1
10
1
ID, Drain Current [A]
ID, Drain Current [A]
150 C
o
10
0
10
0
25 C
o
-55 C
o
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| Description |
650V N-Channel MOSFET
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| File Size |
714.37K /
8 Page |
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it Online |
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Price and Availability
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