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IXYS, Corp.
IXYS[IXYS Corporation]
Directed Energy
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| Part No. |
DE275-501N16A DE275-501N16
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| OCR Text |
...power density
50 A 1 mA .5 2 6 S
Directed Energy, Inc.
An
DE275-501N16A
RF Power MOSFET
IXYS Company
Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. typ. 0.3 1800
VGS = 0 V, VDS = 0.8 VDSS(m... |
| Description |
RF Power MOSFET VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
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| File Size |
75.71K /
3 Page |
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IXYS, Corp.
IXYS[IXYS Corporation]
Directed Energy
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| Part No. |
DE275X2-501N16A DE275X2-501N16
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| OCR Text |
...G = 0.2 IS = 0 Tc = 25C, Derate 6.0W/C above 25C Tc = 25C
Maximum Ratings 500 500 20 30 16 96 16 20 5 >200 750 5.0 0.17 -55...+150 150 -5...2nH) No beryllium oxide (BeO) or other hazardous materials Low gate charge and capacitances
RthJH... |
| Description |
RF Power MOSFET 射频功率MOSFET
RF Power MOSFET 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
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| File Size |
77.70K /
3 Page |
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it Online |
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DELTA[Delta Electronics, Inc.]
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| Part No. |
DFBM-CA220
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| OCR Text |
...BW Q3 BC847BW VIN VBAT 10 9 8 7 6 R2 0R R4 220K 1% R11 10k D3 BAT54W S3 VOL+ SW S2 VOL-SW S1 TALK SW R12 300R R13 680R FAULT VSEN STATUS IRE...2nH
J4 MIC
2 1
R6 2K2 C9 15P
Data Sheet
Feb 24, 2005 Proprietary Information and Spec... |
| Description |
Bluetooth Module Class2
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| File Size |
71.60K /
7 Page |
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it Online |
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Electronic Theatre Controls, Inc.
ETC[ETC]
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| Part No. |
FC1703
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| OCR Text |
...L1 3 RCMIX 4 CLNA_GND 5 CLNA_IN 6 CLNA_OUT 7 8 /2 CMIX_GND CMIX_IN SEL2 VDD
PLNA_OUT
APPLICATIONS
24 23
22 21
20 19 18 FM_IF ...2nH
LO/2 C6 10nF
J5 LO_IN
R5 100 ohm *0.2dB Line Loss for Cellular* *0.3dB Line Loss for PCS*... |
| Description |
Receiver RFIC for Dual-Band Triple Mode
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| File Size |
507.07K /
17 Page |
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it Online |
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VISAY[Vishay Siliconix]
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| Part No. |
IMC-0805
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| OCR Text |
...2 25.2 25.2 25.2 25.2 25.2 7.96 6 6 6 8 8 10 10 12 12 15 15 15 15 15 15 15 15 8 8 10 10 10 10 10 10 10 10 10 10 8 20 18 20 20 22 22 22 23 25...2nH. 10% for 6.8nH to 1,000nH. 5% for 33nH to 1,000nH. Temperature Range: - 40C to +105C (no load)... |
| Description |
Inductors
High Frequency, Surface Mount, Molded
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| File Size |
61.38K /
1 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
IXZ2210N50L IXZ210N50L
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| OCR Text |
... RthJC RthJHS
Tc = 25C, Derate 6.0W/C above 25C Tc = 25C
470 235 10 0.32 0.57 min.
typ.
VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM ...2nH) * No beryllium oxide (BeO) or other
hazardous materials Advantages
* High Performance RF Pa... |
| Description |
N-Channel Enhancement Mode Linear 175MHz RF MOSFET
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| File Size |
245.17K /
9 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
IXZ308N120
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| OCR Text |
... 25C TJ =125C
typ.
max. V 6.5 100 50 1 V nA A mA S +175 C C + 175 C C g
1200 3.5
* Isolated Substrate - high isolation voltage ...2nH) No beryllium oxide (BeO) or other hazardous materials
VGS = 20 V, ID = 0.5ID25 Pulse test, t... |
| Description |
Z-MOS RF Power MOSFET
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| File Size |
143.79K /
3 Page |
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it Online |
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Maxim Integrated Produc...
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
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| Part No. |
MAX2240EBL MAX2240
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| OCR Text |
... Power Ramp Turn-On Time (Notes 6, 9) Power Ramp Turn-Off Time (Notes 7, 9) Nonharmonic Spurious Output (Note 9) Input to Output Isolation i...2nH series inductance required for optimum output power and efficiency, followed by an external RF b... |
| Description |
2.5GHz, 20dBm Power Amplifier IC in UCSP Package
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| File Size |
177.72K /
10 Page |
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it Online |
Download Datasheet |
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Price and Availability
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