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KEC
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| Part No. |
KHB7D0N65F2
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| OCR Text |
...ic total gate charge q g v ds =520v, i d =7.0a v gs =10v (note4,5) - 32 40 nc gate-source charge q gs - 5.4 - gate-drain charge q gd - 12.6 - turn-on delay time t d(on) v dd =325v r l =46 r g =25 (note4,5) - 20 45 ... |
| Description |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
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| File Size |
522.73K /
7 Page |
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KEC semiconductor
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| Part No. |
KHB7D0N65F1
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| OCR Text |
...ic total gate charge q g v ds =520v, i d =7.0a v gs =10v (note4,5) - 32 40 nc gate-source charge q gs - 5.4 - gate-drain charge q gd - 12.6 - turn-on delay time t d(on) v dd =325v r l =46 r g =25 (note4,5) - 20 45 ... |
| Description |
(KHB7D0N65F1 / KHB7D0N65P1) High Voltage MOSFETs
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| File Size |
105.33K /
7 Page |
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it Online |
Download Datasheet |
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A-POWER[Advanced Power Electronics Corp.]
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| Part No. |
AP2761I-A
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| OCR Text |
...480V, VGS=0V VGS=30V ID=10A VDS=520v VGS=10V VDD=320V ID=10A RG=10,VGS=10V RD=32 VGS=0V VDS=15V f=1.0MHz
Gate-Source Leakage Total Gate Charge
3
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off De... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
58.36K /
4 Page |
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it Online |
Download Datasheet |
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Xian Semipower Electronic Technology Co., Ltd.
Xian Semipower Electron...
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| Part No. |
SWP12N65 SW12N65 SWF12N65
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| OCR Text |
...650v, v gs =0v - - 1 ua v ds =520v, t c =125 o c - - 50 ua gss gate to source leak age current, forward v gs =30v, v ds =0v - - 100 na v gs =-30v, v ds =0v - - -100 na gate to source leak age current, reverse on characteristics v gs(... |
| Description |
N-channel MOSFET
N-channel MOSFET
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| File Size |
1,029.78K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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