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  500-1000v Datasheet PDF File

For 500-1000v Found Datasheets File :: 4492    Search Time::1.438ms    
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    WJA1030 WJA1030-PCB

TriQuint Semiconductor
Part No. WJA1030 WJA1030-PCB
OCR Text ...ure MHz dB dB dB dBm dBm dBm dB 500 14.4 -13 -16 +19.4 +37.9 +49.4 5.3 900 14.4 -15 -19 +19.3 +37 +48.3 5.5 Typical 1900 14.4 -30 -13 +1...1000V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes 1000V min. Charged Dev...
Description 5V Active-Bias InGaP HBT Gain Block

File Size 175.70K  /  4 Page

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    TriQuint Semiconductor, Inc.
Part No. WJA1025-PCB
OCR Text ...ure MHz dB dB dB dBm dBm dBm dB 500 18.9 -14 -18 +18.2 +34.7 +47.1 4.8 900 18.4 -16 -14 +17.3 +33 +45.4 5.0 Typical 1900 16.8 -37 -10 +1...1000V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes 1000V min. Charged Dev...
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    QM400HA-2H

Mitsubishi Electric Semiconductor
Part No. QM400HA-2H
OCR Text ...CURRENT IC (A) 700 600 IB2=-16A 500 400 300 200 100 0 0 200 400 600 800 1000 VCE (V) Tj=125C SWITCHING TIME ts, tf (s) IB2= -8A ts tf 2 3 4 5 7 10 1 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE FORWARD BI...
Description 400 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 68.64K  /  5 Page

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    QM400HA-2HB

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM400HA-2HB
OCR Text ...TPUT CHARACTERISTICS (TYPICAL) 500 IB=0.4A Tj=25C 400 IB=0.8A IB=0.1A 300 IB=80mA 200 IB=0.2A 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 10 1 2 3 4 5 7 10 2 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) DC CURRE...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 73.90K  /  5 Page

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    ACPL-M72T-000E

AVAGO TECHNOLOGIES LIMITED
Part No. ACPL-M72T-000E
OCR Text ...ion resistance at t s , v io = 500 v r io 10 9 ? 5 absolute maximum ratings parameter symbol min. max. units condition storage temperatu...1000v, t a =25c 12 4 common mode transient immunity at logic high output [5] | cm l |15 25 kv/ ?...
Description High Speed, Low Power Digital Optocouplers with R2Coupler Isolation and AEC-Q100 Grade 1 Qualifi cation

File Size 122.62K  /  12 Page

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    QM50DY-2H

Mitsubishi Electric Sem...
Mitsubishi Electric Semiconductor
Part No. QM50DY-2H
OCR Text ...gs 1000 1000 1000 7 50 50 400 3 500 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96...1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=50A, IB=1A -IC=50A (diode forward voltage) IC=50A, V...
Description MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 69.23K  /  5 Page

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    Microsemi
Part No. APT15DQ100BG APT15DQ100SG
OCR Text ... 3.06 1.92 100 500 12 characteristic / test conditions forward voltage maximum reverse leakage current junction capacit...1000v v r = 1000v, t j = 125c characteristic / test conditions maximum d.c. reverse voltage maxi...
Description High Voltage Fast Recovery Diode

File Size 112.25K  /  4 Page

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    MUR8100E RURP8100 MURP810 RURP8100NL

FAIRCHILD[Fairchild Semiconductor]
Part No. MUR8100E RURP8100 MURP810 RURP8100NL
OCR Text ...d. TEST CONDITION MIN TYP 50 30 500 30 MAX 1.8 1.5 100 500 85 100 2.0 UNITS V V A A ns ns ns ns nC pF oC/W Typical Performance Curves 40 IR , REVERSE CURRENT (A) 200 175oC IF, FORWARD CURRENT (A) 175oC 10 10 100oC 1 0.1 25o...
Description 8A, 1000V Ultrafast Diodes
(MUR8100E / MURP810) 8A / 1000V Ultrafast Diodes

File Size 117.66K  /  5 Page

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    Advanced Power Technology, Ltd.
Microsemi, Corp.
ADPOW[Advanced Power Technology]
Part No. APT10026JLL_03 APT10026JLL APT10026JLL03
OCR Text ... UNIT Volts 1000 0.260 100 500 100 3 5 (VGS = 10V, 15A) Ohms A nA Volts 12-2003 050-7113 Rev A Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) Gate-Sou...
Description 30 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 107.27K  /  5 Page

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For 500-1000v Found Datasheets File :: 4492    Search Time::1.438ms    
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