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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO8403
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| OCR Text |
... a (v gs = -4.5v) r ds(on) < 42m ? (v gs = -4.5v) r ds(on) < 52m ? (v gs = -2.5v) r ds(on) < 70m ? (v gs = -1.8v) esd rating: 3000v hbm the ao8403 uses advanced trench technology to provide excellent r ds(on) , low gate charge a... |
| Description |
P-Channel Enhancement Mode Field Effect Transistor
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| File Size |
160.27K /
4 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO6402L
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| OCR Text |
...8m ? (v gs = 10v) r ds(on) < 42m ? (v gs = 4.5v) the ao6402 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device may be used as a load switch or in pwm applications. ao6402l ( green product... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
175.50K /
4 Page |
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it Online |
Download Datasheet
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOD420
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| OCR Text |
...8m ? (v gs = 10v) r ds(on) < 42m ? (v gs = 4.5v) the aod420 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. standard produc... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
217.12K /
4 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO4812
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| OCR Text |
...8m ? (v gs = 10v) r ds(on) < 42m ? (v gs = 4.5v) the ao4812 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the two mosfets make a compact and efficient switch and synchronous rectifier combinatio... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
214.54K /
4 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO9926A
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| OCR Text |
...m ? (v gs = 2.5v) r ds(on) < 42m ? (v gs = 1.8v) the ao9926a uses advanced trench technology to provide excellent r ds(on) and low gate charge. they offer operation over a wide gate drive range from 1.8v to 8v. the two devices may ... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
306.97K /
6 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOC2800
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| OCR Text |
42m w r ss(on) (at v gs =4.0v) < 44m w r ss(on) (at v gs =3.1v) < 49m w r ss(on) (at v gs =2.5v) < 61m w the aoc2800 uses advanced trench technology to prov ide excellent r ss(on) , low gate charge and operation with gate voltag... |
| Description |
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
299.16K /
5 Page |
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it Online |
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