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  400v us Datasheet PDF File

For 400v us Found Datasheets File :: 1652    Search Time::1.75ms    
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    FGH75T65UPD

Fairchild Semiconductor
Part No. FGH75T65UPD
OCR Text ...(on) turn-on delay time v cc = 400v, i c = 75a, r g = 3 , v ge = 15v, inductive load, t c = 25 o c - 32 42 ns t r rise time - 43 56 ...us 3 www.fairchildsemi.com fgh75t65upd rev. c0 fgh75t65upd 650v 75a field stop igbt electrical...
Description 650V, 75A Field Stop Trench IGBT

File Size 901.50K  /  10 Page

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    ADPOW[Advanced Power Technology]
Part No. APTM50HM75STG
OCR Text ... = 0V,VDS = 500V VGS = 0V,VDS = 400v T j = 25C T j = 125C Typ VGS = 10V, ID = 23A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V 75 3 Max 100 500 90 5 100 Unit A m V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd...
Description Full bridge Series & parallel diodes MOSFET Power Module

File Size 312.80K  /  7 Page

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    上海贝岭股份有限公司
Part No. BL8305
OCR Text ...148 1n 15v 17.2k 100k 470p 0.1u 400v 175k 430k 1010 13005 22n 13005 22n fr107fr107 2mh 100n 8.2n t8 36w in4148 100k 0.1u 620k rstart rp1 rp2...us tdeadbip ???? 3.0 us hv6.3v bl8305? v1.0 - 8 - http://www.belling.com....
Description BL8305

File Size 287.81K  /  8 Page

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    SAMWIN
Part No. SW830
OCR Text ...ain-source leakagecurrent v ds =400v, tc=125 -- 1 ua gate-source leakagecurrent v gs =30v,v ds =0v - - 100 na gate-source leakagereverse v ...us reverse recovery time t rr v 1.5 - - i s =5a,v gs =0v diode forward voltage v sd 20 - - pulsed so...
Description N-Channel MOSFET

File Size 856.71K  /  6 Page

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    上海贝岭股份有限公司
Part No. BL8305A
OCR Text ...148 1n 15v 17.2k 100k 470p 0.1u 400v 175k 430k 10 10 13005 22n 13005 22n fr107 fr107 2mh 100n 8.2n t8 36w in4148 100k 0.1u 620k rstart rp1 r...us tdeadbip ???? 2.5 --- 3.5 us hv6.3v v pro ?? - 0.55 - v v ld1up...
Description BL8305A

File Size 332.50K  /  8 Page

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    SHANGHAI BELLING
Part No. BL8305
OCR Text ...148 1n 15v 17.2k 100k 470p 0.1u 400v 175k 430k 1010 13005 22n 13005 22n fr107fr107 2mh 100n 8.2n t8 36w in4148 100k 0.1u 620k rstart rp1 rp2...us tdeadbip ???? 3.0 us hv6.3v bl8305? v1.0 - 8 - http://www.belling.com.c...
Description BL8305

File Size 392.82K  /  8 Page

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    SHANGHAI BELLING
Part No. BL8305A
OCR Text ...148 1n 15v 17.2k 100k 470p 0.1u 400v 175k 430k 10 10 13005 22n 13005 22n fr107 fr107 2mh 100n 8.2n t8 36w in4148 100k 0.1u 620k rstart rp1 r...us tdeadbip ???? 2.5 --- 3.5 us hv6.3v v pro ?? - 0.55 - v v ld1up...
Description BL8305A

File Size 356.21K  /  8 Page

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    FGH40T65UPD

Fairchild Semiconductor
Part No. FGH40T65UPD
OCR Text ...temperature 2: ic = 120a, vce = 400v, rg = 15 thermal characteristics symbol description ratings unit v ces collector to emitter voltage 65...us t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 ...
Description 650V, 40A, Field Stop Trench IGBT
650 V, 40 A Field Stop Trench IGBT

File Size 296.26K  /  10 Page

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    SW830

List of Unclassifed Manufacturers
ETC[ETC]
Part No. SW830
OCR Text ...nced to 25 VDS=500V, VGS=0V VDS=400v, Tc=125 VGS=30V,VDS=0V VGS=-30V, VDS=0V 500 (Tc=25 unless otherwise noted) SW830 Value Test Conditi...us S s V ns uc NOTES 1. Repeativity rating: pulse width limited by junction temperature 2....
Description N-Channel MOSFET

File Size 674.64K  /  6 Page

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    SEMIWELL[SemiWell Semiconductor]
Part No. SFP840
OCR Text ...25 C VDS = 500V, VGS = 0V VDS = 400v, TC = 125 C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250uA VGS =10 V, ID = 4A 500 0.6 1...us, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse Width 300us, Duty Cycle 2% 5. Essentially ...
Description 125W Power MOSFET, 500V Vdss, 8A Id, 0.85Om Rds
N-Channel MOSFET

File Size 870.98K  /  7 Page

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For 400v us Found Datasheets File :: 1652    Search Time::1.75ms    
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