350-mhz pdf Datasheet P14 Full Text Search --- IC-ON-LINE


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350-mhz Datasheet PDF File

For 350-mhz Found Datasheets File :: 35638 Search Time::4.969ms
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				HITACHI[Hitachi Semiconductor]
Part No.	2SJ535
OCR Text	...8 0.038 25 2500 1300 300 25 150 350 220 -0.95 100 Max -- -- -10 10 -2.0 0.037 0.055 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF p...MHz Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) 200 100 50 ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	53.39K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ544
OCR Text	...8 0.038 25 2500 1300 300 25 150 350 220 -0.95 100 Max -- -- -10 10 -2.0 0.037 0.055 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF p...MHz Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) 200 100 50 ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	53.22K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ553 2SJ553L 2SJ553S
OCR Text	...8 0.038 25 2500 1300 300 25 150 350 220 -0.95 100 Max -- -- -10 10 -2.0 0.037 0.055 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF p...MHz Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) 200 100 50 ...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	55.75K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ554
OCR Text	...8 0.038 30 2500 1300 300 25 160 350 240 -1.1 100 Max -- -- -10 10 -2.0 0.037 0.055 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF...MHz 1000 10000 3000 1000 Reverse Recovery Time trr (ns) 500 200 100 50 Capacitance C ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	53.62K / 9 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ557 2SJ557-T2B 2SJ557-T1B
OCR Text	...urce On-state Resistance - m 350 ID = -1.0 A 300 250 200 150 100 50 -50 -10 V VGS = -4.0 V -4.5 V RDS (on) - Drain to Source On-state ...MHz VGS = 0V Ciss td(off) 100 tf tr 100 Coss Crss td(on) 10 VDD = -10V VGS(on) = -10V...
Description	Pch enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size	60.99K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SK1056 2SK1057 2SK1058
OCR Text	...-- -- -- -- -- -- -- -- 1.0 600 350 10 180 60 -- 1.45 12 1.4 -- -- -- -- -- V V V S pF pF pF ns ns VDD = 20 V, ID = 4 A, I G = 100 A, VDS = ...MHz Typ -- Max -- Unit V Test conditions I D = 10 mA, VGS = -10 V 3 2SK1056, 2SK1057, 2SK1058 ...
Description	Silicon N Channel MOS FET Silicon N-Channel MOS FET
File Size	39.06K / 8 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SK1159 2SK1160
OCR Text	....5 1150 340 55 17 55 100 45 0.9 350 3.0 0.7 0.8 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V ns I F = 8 A, VGS = 0 I F = 8 A, VGS ...MHz V I D = 1 mA, VDS = 10 V I D = 4 A, VGS = 10 V *1 Typ -- Max -- Unit V Test conditions I D = 10...
Description	Silicon N-Channel MOS FET
File Size	48.23K / 9 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SK1161 2SK1162
OCR Text	...7.0 1050 280 40 15 60 90 45 1.0 350 3.0 0.8 0.9 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V ns I F = 10 A, VGS = 0 I F = 10 A, VG...MHz V I D = 1 mA, VDS = 10 V I D = 5 A, VGS = 10 V *1 Typ -- Max -- Unit V Test conditions I D = 10...
Description	Silicon N Channel MOS FET Silicon N-Channel MOS FET
File Size	33.64K / 6 Page	View it Online	Download Datasheet

				Motorola, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
Part No.	4N25 4N26 4N28 4N27 4N25A
OCR Text	... K L M N INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.300 BSC 0_ 15 _ 0.015 0.100 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 ...
Description	6-Pin DIP Optoisolators Transistor Output
File Size	280.78K / 6 Page	View it Online	Download Datasheet

				AD[Analog Devices]
Part No.	AD823 AD823AN AD823AR AD823AR-REEL
OCR Text	... dB Bandwidth of 16 MHz, G = +1 350 ns Settling Time to 0.01% (2 V Step) Slew Rate of 22 V/ s Good DC Performance 800 V Max Input Offset Voltage 2 V/ C Offset Voltage Drift 25 pA Max Input Bias Current Low Distortion -108 dBc Worst Harmonic...
Description	Dual, 16 MHz, Rail-to-Rail FET Input Amplifier
File Size	430.59K / 16 Page	View it Online	Download Datasheet

For 350-mhz Found Datasheets File :: 35638 Search Time::4.969ms
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