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  30.075 Datasheet PDF File

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    AM50-0006 AM50-0006PCS AM50-0006PDC AM50-0006TR AM500006V2 AM500006 AM50-0006V2

MACOM[Tyco Electronics]
MA-Com
Part No. AM50-0006 AM50-0006PCS AM50-0006PDC AM50-0006TR AM500006V2 AM500006 AM50-0006V2
OCR Text ...ns : TA=+25C, Z0 = 50 , PIN = - 30 dBm 1 Parameter Test Conditions Units Min. 1500 MHz Typ. 18 1.60 2.2:1 1.5:1 Max. 20 2.00 Min. 15 1900 MHz Typ. 17.5 1.65 1.5:1 1.5:1 0 -6.0 35 10 4.5 6.5 10 Max. 20 2.00 Gain Noise Figu...
Description 1400-2000 MHz, low noise amplifier
Circular Connector; No. of Contacts:128; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
Low Noise Amplifier 1400 - 2000 MHz
1400-1520 MHz, low noise amplifier

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    ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736

Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
Part No. ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736
OCR Text ...ormance, TA = 25C 18 15 GA 30 25 30 25 MSG GA (dB) 2.0 1.5 12 9 6 20 20 MSG GAIN (dB) 15 |S21|2 GAIN (d...075 .106 .136 .166 .189 .196 .198 .195 .188 .182 .171 S22 Ang. 77 70 56 43 31 14 -5 -23 -38 -48 -64 ...
Description 0.5-12 GHz General Purpose Gallium Arsenide FET
0.5?12 GHz General Purpose Gallium Arsenide FET
0.512 GHz General Purpose Gallium Arsenide FET

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    ATF-13736 ATF-13736-STR ATF-13736-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-13736 ATF-13736-STR ATF-13736-TR1
OCR Text ...9 Mag. .59 .57 .56 .52 .47 .39 .30 .19 .11 .09 .15 .19 .19 .15 .11 Ang. -36 -47 -55 -63 -75 -92 -112 -121 -140 92 47 21 -3 -26 -34 Typica...075 .089 .102 .117 .128 .138 .135 .131 .126 .118 .110 .104 .102 S22 Ang. 64 52 39 32 21 9 -5 -19 -28...
Description 2-16 GHz Low Noise Gallium Arsenide FET

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    ATF-25570

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-25570
OCR Text ...4.70 4.14 3.48 3.01 2.67 2.45 2.30 2.06 1.90 1.72 1.61 1.56 Ang. 160 145 115 94 73 54 36 18 -1 -19 -36 -48 -68 dB -28.9 -26.2 -22.5 -20.9 -1...075 .090 .102 .114 .121 .133 .141 .146 .151 .157 .160 S22 Ang. 71 62 44 33 20 9 0 -7 -16 -28 -35 -40...
Description 0.5-10 GHz General Purpose Gallium Arsenide FET

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    ATF-45171

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-45171
OCR Text ... Typical Performance, TA = 25C 30 20 35 30 29 P1 dB (dBm) P1 dB 25 20 15 G1 dB (dBm) POUT (dBm) 25 20 15 10 5 40 30 20 10 0 0 5...075 .083 .091 .109 .113 S22 Ang. 46 19 5 2 0 -2 -6 -13 -19 -25 -30 -39 -50 -61 Mag. .37 .26 .31 .43 ...
Description 2-8 GHz Medium Power Gallium Arsenide FET

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    ATF-46171

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-46171
OCR Text ...al Performance, TA = 25C 28 20 30 25 15 G1 dB (dBm) POUT (dBm) 25 P1 dB 20 40 GAIN (dB) MSG 27 P1 dB (dBm) 20 15 10 5 ...075 .079 .083 .093 .106 .112 .118 .121 S22 Ang. 63 30 13 2 -3 -6 -10 -14 -17 -21 -24 -32 -49 -66 -71...
Description 2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)

File Size 39.26K  /  3 Page

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    BA000LBSG BA032LBSG BA028LBSG1 BA029LBSG BA000LBSGSERIES BA030LBSG2-TR

ROHM[Rohm]
Part No. BA000LBSG BA032LBSG BA028LBSG1 BA029LBSG BA000LBSGSERIES BA030LBSG2-TR
OCR Text ... mV V dB dB 150 - - - 80 30 - - - Io=1~50mA1 Io=10mA, Vcc=3.8~7V1 Io=10mA, C=0.01F2 Io=10mA, f=400Hz Io=10mA, f=400Hz, C=0.01F2 ...075 150 - V mV mA mV mV V dB dB 150 - - - 80 30 - - - Io=1~50mA1 Io=10mA, Vcc=4.0~7V1...
Description    Super-mini package regulator IC
Internal output transistor (IO=150mA), Internal temperature protection circuit

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    BA00LBSG

ROHM[Rohm]
Part No. BA00LBSG
OCR Text ... mV V dB dB 150 - - - 80 30 - - - Io=1~50mA1 Io=10mA, Vcc=3.8~7V1 Io=10mA, C=0.01F2 Io=10mA, f=400Hz Io=10mA, f=400Hz, C=0.01F2 ...075 150 - V mV mA mV mV V dB dB 150 - - - 80 30 - - - Io=1~50mA1 Io=10mA, Vcc=4.0~7V1...
Description Super-mini package regulator IC

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    BC847AWT1 BC847BWT1 BC847CWT1 BC848BWT1 BC846BWT1 BC848CWT1 BC848AWT1 BC846AWT1

Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
Part No. BC847AWT1 BC847BWT1 BC847CWT1 BC848BWT1 BC846BWT1 BC848CWT1 BC848AWT1 BC846AWT1
OCR Text ...0 100 BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V mAdc COLLECTOR 3 BC846AWT1,BWT1 BC847AWT1,BWT1, CWT1 BC848AWT1,BWT1, CWT1 MAX...075 1.9 0.035 0.9 0.028 0.7 inches mm SOT-323/SC-70 SOT-323/SC-70 POWER DISSIPATION The power di...
Description CASE 419-02, STYLE 3 SOT-323/SC-70 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CASE 419-02/ STYLE 3 SOT-323/SC-70

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    BZT52-C10S BZT52-C11S BZT52-C12S BZT52-C13S BZT52-C15S BZT52-C16S BZT52-C18S BZT52-C20S BZT52-C22S BZT52-C24S BZT52-C27S

PanJit International, Inc.
PanJit International Inc.
PANJIT[Pan Jit International Inc.]
Part No. BZT52-C10S BZT52-C11S BZT52-C12S BZT52-C13S BZT52-C15S BZT52-C16S BZT52-C18S BZT52-C20S BZT52-C22S BZT52-C24S BZT52-C27S BZT52-C2V4S BZT52-C2V7S BZT52-C30S BZT52-C33S BZT52-C36S BZT52-C39S BZT52-C3S BZT52-C3V3S BZT52-C5V1S BZT52-C5V6S BZT52-C6V2S BZT52-C6V8S BZT52-C9V1S BZT52-C3V6S BZT52-C3V9S BZT52-C4V3S BZT52-C4V7S BZT52-C7V5S BZT52-C8V2S
OCR Text ...0 11 12 13 15 16 18 20 22 24 27 30 33 36 39 2.28 2.5 2.8 3.1 3.4 3.7 4 4.4 4.8 5.2 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 ...075 -0.065 -0.060 -0.055 -0.055 -0.050 -0.035 -0.015 0.005 0.020 0.030 0.045 0.050 0.055 0.065 0.070...
Description Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 50μA低电流操作,低反向漏,低噪声稳压二极管(250μA工作电流,小反向漏电流,低噪声,齐纳二极管)
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 250μA低电流操作,低反向漏,低噪声稳压二极管(250μA工作电流,小反向漏电流,低噪声,齐纳二极管)
Dual Negative-Edge-Triggered J-K Flip-Flop With Clear And Preset 16-SOIC -40 to 85 表面贴装硅稳压二极管
PTSE 23C 1#16,22#20 PIN RECP
Replaced by SN74LVC10A : Triple 3-Input Positive-NAND Gate 14-SOIC -40 to 85
SURFACE MOUNT SILICON ZENER DIODES

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