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  3.7ma. Datasheet PDF File

For 3.7ma. Found Datasheets File :: 3492    Search Time::1.016ms    
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    PANASONIC[Panasonic Semiconductor]
Part No. 2SD2276
OCR Text ...tion Complementary to 2SB1503 3.30.2 5.00.3 3.0 Unit: mm 20.00.5 s Features q q q 6.0 1.5 1.5 Solder Dip s Absolu...7mA IC = 7A, IB = 7mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 7A, IB1 = 7mA, IB2 = -7mA, VCC = 50V 20 2....
Description Silicon NPN triple diffusion planar type Darlington(For power amplification)

File Size 55.42K  /  3 Page

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    AD[Analog Devices]
Part No. AD22157
OCR Text ...lity. Pin Configuration 5 4 3 2 1 PIN 1 IDENTIFIER NC NC Vlow Vhigh NC CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can...
Description Wheel Speed Sensor For ABS Systems

File Size 272.19K  /  7 Page

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    CYSTEKEC[Cystech Electonics Corp.]
Part No. BTC5177N3
OCR Text ....13 Revised Date : Page No. : 1/3 BTC5177N3 Description The BTC5177N3 is a NPN Epitaxial Silicon Transistor designed for low noise micr...7mA (Note 1) VCE =2V, IC =7mA, f =2GHz VCE =1V, IC =5mA, f =2GHz VCE =2V, IC =3mA, f =2GHz VCE =1V, ...
Description High Frequency NPN Epitaxial Planar Transistor

File Size 150.65K  /  3 Page

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    MGF4936AM

Mitsubishi Electric Semiconductor
Part No. MGF4936AM
OCR Text ...o gate to drain voltage -3 v v gso gate to source voltage -3 v i d drain current idss ma pt total power dissipat...7ma,f=12ghz -- 0.50 0.70 db note: gs and nfmin. are tested with sampling inspection. outline draw...
Description Low Noise GaAs HEMT

File Size 184.22K  /  6 Page

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    P-11AAH

Panasonic Semiconductor
Part No. P-11AAH
OCR Text ... 1 2 3 4 5 6 7 8 9 20?c 65?c 0?c 45?c 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 charge: 3.7ma(0.033it)x 48hrs., 20?c . discharge: 22ma(0.2it). 0 charge t...
Description NICKEL CADMIUM BATTERIES

File Size 16.73K  /  1 Page

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    CYSTEKEC[Cystech Electonics Corp.]
Part No. BTC5179S3
OCR Text ....25 Revised Date : Page No. : 1/3 BTC5179S3 Description The BTC5179S3 is a NPN Epitaxial Silicon Transistor designed for low noise micr...7mA (Note 1) VCE =2V, IC =7mA, f =2GHz VCE =1V, IC =5mA, f =2GHz VCE =2V, IC =3mA, f =2GHz VCE =1V, ...
Description High Frequency NPN Epitaxial Planar Transistor

File Size 153.80K  /  3 Page

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    CYSTEKEC[Cystech Electonics Corp.]
Part No. BTC5181WC3
OCR Text ....15 Revised Date : Page No. : 1/3 BTC5181WC3 Description The BTC5181WC3 is a NPN Epitaxial Silicon Transistor designed for low noise mi...7mA (Note 1) VCE =2V, IC =7mA, f =2GHz VCE =1V, IC =5mA, f =2GHz VCE =2V, IC =3mA, f =2GHz VCE =1V, ...
Description High Frequency NPN Epitaxial Planar Transistor

File Size 156.08K  /  3 Page

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    MAX3935 MAX3935EGJ MAX3935E_D MAX3935E/D

Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Part No. MAX3935 MAX3935EGJ MAX3935E_D MAX3935E/D
OCR Text ...EAM devices at amplitudes up to 3.0VP-P when the device impedance is 50. Typical (20% to 80%) edge speeds are 34ps. The output has an on-chi...7mA, IMOD = 83.3mA, TA = +25C, unless otherwise noted.) (Note 1) PARAMETER Power-Supply Voltage Pow...
Description 10.7Gbps EAM Driver

File Size 1,540.72K  /  14 Page

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    SANYO[Sanyo Semicon Device]
Part No. FH201
OCR Text ... 0.2 0.425 12 0.65 2.0 3 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Tr1 [2SC4871] Collector-to-Base Voltage...7mA, f=1GHz VCE=5V, IC=4mA, f=1GHz 10 90 10 0.4 13 1.3 2.8 0.7 1.0 10 180 GHz pF dB dB A A Symbol Co...
Description VCO OSC Circuit Applications

File Size 74.16K  /  8 Page

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    SANYO[Sanyo Semicon Device]
Part No. FH202
OCR Text ... 0.2 0.425 12 0.65 2.0 3 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Tr1 [2SC5226] Collector-to-Base Voltage...7mA, f=1GHz 9 90 7 0.75 12 1.0 1.8 1.2 1.0 10 200 GHz pF dB dB A A Symbol Conditions Ratings min typ...
Description NPN Epitaxial Planar Silicon Composite Transistor VCO OSC Circuit Applications

File Size 80.88K  /  9 Page

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