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Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
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| Part No. |
FS2VS-16A
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| OCR Text |
.................................. 2a
q GATE w DRAIN e SOURCE r DRAIN e
TO-220S
APPLICATION SMPS, DC-DC Converter, battery charger, po...800v, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V VDS = 25... |
| Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
43.89K /
4 Page |
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Sanyo
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| Part No. |
2SC3459 0330
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| OCR Text |
...ime Symbol VCE(sat) VBE(sat) IC=2a, IB=0.4A IC=2a, IB=0.4A 1100 800 7 800 0.5 3.0 0.3 Conditions Ratings min typ max 2.0 1.5 Unit V V V V V V s s s
V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=5mA, RBE= V(BR)EBO IE=1mA, IC=0 VCEX(sus) IC=2a, IB1=-I... |
| Description |
NPN Triple Diffused Planar Silicon Transistor 800v/4.5A Switching Regulator Applications
From old datasheet system
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| File Size |
108.60K /
4 Page |
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it Online |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
BUL74B
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| OCR Text |
...E = 5V IB = 0.1A IB = 0.5A IB = 2a IB = 0.5A IB = 2a VCE = 4V f = 1MHz
V 10 100 10 10 100
A A A
18 10 11 8
50 30 30 20 0.1 0.5 0.8 1.2 1.5 16 90 V V --
hFE*
DC Current Gain
IC = 5A IC = 7A IC = 10A IC = 1A
VCE(sat)*
... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
19.35K /
2 Page |
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it Online |
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SEME-LAB[Seme LAB]
SemeLAB
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| Part No. |
BUL64B
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| OCR Text |
... 552612.
800v 400V 10V 5A 8A 2a 20W -55 to +150C
Prelim. 3/95
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated)
Parameter
VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO
SEME
BUL64B
Test Conditions
Min.
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| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
18.90K /
2 Page |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
BUL62B
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| OCR Text |
...Emitter Saturation Voltage IC = 2a IC = 3A IC = 2a IC = 3A IC = 0.2a VCB = 20V
VBE(sat)*
Base - Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Transition Frequency Output Capacitance
ft Cob
MHz pF
* Pulse test tp = 300s ,... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
19.21K /
2 Page |
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SEME-LAB[Seme LAB]
TT electronics Semelab Limited
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| Part No. |
BUL54B
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| OCR Text |
...V IC = 0 IC = 0.1A IC = 1A IC = 2a IC = 100mA TC = 125C VCE = 5V VCE = 5V VCE = 1V TC = 125C IB = 20mA IB = 0.2a IB = 0.4A IB = 0.2a IB = 0.4A VCE = 4V f = 1MHz VCE = 400V
V 10 100 100 10 100
A A A
20 15 5
30 45 10 0.05 0.1 0.3 ... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
18.15K /
2 Page |
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it Online |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
BUL54BFI
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| OCR Text |
...V IC = 0 IC = 0.1A IC = 1A IC = 2a IC = 100mA TC = 125C VCE = 5V VCE = 5V VCE = 1V TC = 125C IB = 20mA IB = 0.2a IB = 0.4A IB = 0.2a IB = 0.4A VCE = 4V f = 1MHz VCE = 400V
V 10 100 100 10 100
A A A
20 15 5
30 45 10 0.05 0.1 0.3 ... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
18.18K /
2 Page |
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it Online |
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SEME-LAB[Seme LAB]
TT electronics Semelab Limited
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| Part No. |
BUL52B BUL52
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| OCR Text |
...= 1V TC = 125C IB = 20mA IB = 0.2a IB = 0.4A IB = 0.6A IB = 0.2a IB = 0.4A IB = 0.6A VCE = 4V f = 1MHz IC = 1A IC = 2a IC = 3A IC = 1A VCE = 400V
V 10 100 100 10 100
A A A
20 15 10 5
30 25 15 0.05 0.1 0.15 0.3 0.8 0.9 0.95 20 40... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
19.27K /
2 Page |
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Sanyo
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| Part No. |
2SC3152
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| OCR Text |
... IE=0 VEB=5V, IC=0 VCE=5V, IC=0.2a VCE=5V, IC=1A VCE=10V, IC=0.2a VCB=10V, f=1MHz 10* 8 15 60 MHz pF Conditions Ratings min typ max 10 10 40* Unit A A
* : For the hFE1 of the 2SC3152, specify two ranks or more in principle.
10 K 20 15 L... |
| Description |
NPN Triple Diffused Planar Silicon Transistor
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| File Size |
101.58K /
4 Page |
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it Online |
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Price and Availability
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