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ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
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| Part No. |
ADR3410
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| OCR Text |
...aft 0603CS series.
Figure 4: 2110 - 2170 MHz Application Circuit (50 Terminations)
ADVANCED PRODUCT INFORMATION - Rev 0.1 04/2003
5
ADR3410
NOTES
6
ADVANCED PRODUCT INFORMATION - Rev 0.1 04/2003
ADR3410
NOTES
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| Description |
50 ?High Linearity 1 Watt Amplifier
50 蟹 High Linearity 1 Watt Amplifier
50 з High Linearity 1 Watt Amplifier
The ADR3410 is a high performance, single-stage InGaP HBT amplifier designed for use in wireless infrastructure systems as a highly ...
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| File Size |
781.77K /
8 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S21100NR1 MRF6S21100NBR1
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| OCR Text |
...lications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us ed in Clas s AB ...0.01% Probability on CCDF. Power Gain -- 14.5 dB Drain Efficiency -- 25.5% IM3 @ 10 MHz Offset -- - ... |
| Description |
RF Power Field Effect Transistors
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| File Size |
852.71K /
18 Page |
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it Online |
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WJCI[WJ Communication. Inc.]
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| Part No. |
AP512-PCB AP512
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| OCR Text |
2110 - 2170 MHz * 28.5 dB Gain * -55 dBc ACLR
@ 28 dBm W-CDMA linear power
The Communications Edge TM Product Information
UMTS-band 8...0 in this configuration. Increasing that value will decrease the quiescent and operating current of... |
| Description |
UMTS-band 8W HBT Amplifier Module
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| File Size |
263.81K /
5 Page |
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it Online |
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Holtek Semiconductor Inc.
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| Part No. |
HT38A5
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| OCR Text |
...ES
TEST
AUD
Chip size: 2110 2530 (mm)2 * The IC substrate should be connected to VSS in the PCB layout artwork.
Pad Coordinates...0.3V to VSS+5.5V Input Voltage ............................ VSS-0.3V to VDD+0.3V Storage Temperature... |
| Description |
12 Melody Music Generator
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| File Size |
126.80K /
11 Page |
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it Online |
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Freescale Semiconductor, Inc
MOTOROLA
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| Part No. |
MHVIC2115NR2
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| OCR Text |
...DMA Performance: - 45 dBc ACPR, 2110 - 2170 MHz, VDD = 27 Volts, IDQ1 = 56 mA, IDQ2 = 61 mA, IDQ3 = 117 mA, Pout = 34 dBm, 3GPP Test Model 1, Measured in 1.0 MHz BW @ 4 MHz offset, 64 DTCH Power Gain -- 30 dB PAE = 16% Driver Application * ... |
| Description |
2170 MHz, 26 V, 23/34 dBm W??DMA RF LDMOS Wideband Integrated Power Amplifier
RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
412.03K /
12 Page |
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it Online |
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