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New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
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| Part No. |
STW12NK80Z STB12NK80Z STP12NK80Z
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| OCR Text |
...ng area (1) isd < 10.5a, di/dt <200a/us, vdd < v(br)dss, t, < tjmax. (*) limited only by maximum temperature allowed thermal data rthj-case rthj-amb ti thermal resistance junction-case max thermal resistance junction-ambient max maximum lea... |
| Description |
N-CHANNEL 800v - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH?Power MOSFET
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| File Size |
147.79K /
3 Page |
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IRF[International Rectifier]
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| Part No. |
IRG4PSH71KD IRG4PSH71
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| OCR Text |
... 1400 2100 TJ = 125C 16 di/dt = 200a/s 250 -- A/s TJ = 25C See Fig. 320 -- TJ = 125C 17
2
www.irf.com
IRG4PSH71KD
40
F o r b o th...800v V GE = 15V TJ = 25 C 14 I C = 42A
100
RG = 5.0 VGE = 15V VCC = 800v IC = 84 A
IC = 4... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A)
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| File Size |
195.78K /
10 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGTG34N100E2
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| OCR Text |
...100E2 1000 1000 55 34 200 20 30 200a at 0.8 BVCES 208 1.67 -55 to +150 260 3 10 UNITS V V A A A V V W W/oC oC oC s s
Collector-Emitter Vo...800v 1.0 VCE = 400V 0.5 10
20
0 +25
0.0 +50 +75 +100 +125 +150 1 10 ICE, COLLECTOR-EMITTER ... |
| Description |
34A/ 1000V N-Channel IGBT
34A, 1000V N-Channel IGBT
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| File Size |
38.45K /
5 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQA8N80_F109 FQA8N80 FQA8N80_06 FQA8N8006 FQA8N80F109
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| OCR Text |
...ng TJ = 25C 3. ISD 8.4A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially indep...800v N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
V... |
| Description |
800v N-Channel MOSFET
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| File Size |
772.71K /
9 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQA8N80C_F109 FQA8N80C FQA8N80C_06 FQA8N80C06
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| OCR Text |
...ng TJ = 25C 3. ISD 8.4A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially indep...800v N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
V... |
| Description |
800v N-Channel MOSFET
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| File Size |
780.90K /
9 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQA8N100C
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| OCR Text |
...ing TJ = 25C 3. ISD 8A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Indepe...800v
Capacitance [pF]
8
2500 2000 1500 1000
Coss
Notes : 1. VGS = 0 V 2. f = 1 MHz
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| Description |
1000V N-Channel MOSFET
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| File Size |
690.13K /
8 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQA7N80C_F109 FQA7N80C FQA7N80C_06 FQA7N80C06
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| OCR Text |
...ng TJ = 25C 3. ISD 8.4A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially indep...800v N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
V... |
| Description |
800v N-Channel MOSFET
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| File Size |
785.87K /
9 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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