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				EIC[EIC discrete Semiconductors] Electronics Industry Public Company Limited
Part No.	SZ5510 SZ5511 SZ5512 SZ5513 SZ5514 SZ5515 SZ5516 SZ5517 SZ5518 SZ5519 SZ5551 SZ554H SZ559B SZ5591 SZ5568 SZ5547 SZ55B4 SZ5556 SZ558C SZ5582 SZ55D0 SZ5520 SZ5522 SZ5524 SZ5527 SZ5528 SZ5530 SZ5533 SZ5536 SZ5539 SZ553J SZ5543 SZ554D SZ555B SZ555G SZ5562 SZ556C SZ556I SZ5575 SZ557F SZ55B0 SZ55B1 SZ55B2 SZ55B3 SZ55B5 SZ55B6 SZ55B8 SZ55B9
OCR Text	200 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low...480 435 393 360 330 297 270 225 246 208 193 180 169 159 150 142 135 123 112 100 96 90 82 75 69 63 57...
Description	SURFACE MOUNT SILICON ZENER DIODES
File Size	27.89K / 2 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG] Infineon Technologies A...
Part No.	08090 PTF080901 PTF080901E PTF080901F 8090
OCR Text	... TJ PD Value 65 -0.5 to +12 200 335 1.9 -40 to +150 0.52 Unit V V C W W/C C C/W Typical Performance (measurements taken in produc...480 mA 50 IMD (dBc) -35 -40 -45 -50 -55 -60 39 41 43 45 47 49 51 820 mA 650 mA 880 90...
Description	LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz LDMOS RF Power Field Effect Transistor 90 W 869-960 MHz LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
File Size	201.97K / 10 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT5010JLC
OCR Text	...V MIN TYP MAX UNIT 5200 1050 200 150 27 75 11 12 30 6 nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Ris...480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.16...
Description	POWER MOS VI 500V 44A 0.100 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.93K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT5010JN APT5012JN APT5012
OCR Text	... 20 20 5V 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 TJ = -55C ID, DRAI...480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (....
Description	POWER MOS IV 500V 48.0A 0.10 Ohm / 500V 43.0A 0.12 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N沟道增强型高压功率MOSFET
File Size	60.42K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JVFR
OCR Text	... 5V 20 4.5V 4V 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0 20 4.5V 4V 0 2 4 ...480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.16...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.63K / 4 Page	View it Online	Download Datasheet

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