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MAXIM - Dallas Semiconductor
Maxim Integrated Products, Inc.
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| Part No. |
MAX2016 MAX2016ETI MAX2016ETID MAX2016ETITD MAX2016ETI-T
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| OCR Text |
2.5GHz Dual Logarithmic Detector/ Controller for Power, Gain, and VSWR Measurements
General Description
The MAX2016 dual logarithmic detec...7 8 COR 9 VCC 10 SETD 11 OUTD 12 VCC 13 FV2 14 FV1 27 26 25 24 22 21 FB1 20 VCC 19 RFINB+ FB2 18 RFI... |
| Description |
2.7 V to 5.25 V, LF-to-2.5 GHz dual logarithmic detector/controller for power, gain, and VSWR measurement
LF-to-2.5GHz Dual Logarithmic Detector/ Controller for Power, Gain, and VSWR Measurements
LF-to-2.5GHz Dual Logarithmic Detector/Controller for Power, Gain, and VSWR Measurements
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| File Size |
398.91K /
19 Page |
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it Online |
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Sanyo
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| Part No. |
2SA1669 0112
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| OCR Text |
...9GHz) * Small noise figure : NF=2.0dB typ (f=0.9GHz)
Package Dimensions
unit:mm 2018A
[2SA1669]
C : Collector B : Base E : Emitter
...7 1.5 GHz pF pF dB dB dB Conditions Ratings min typ max -0.1 -0.1 Unit A A
Note) Marking : DB
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| Description |
PNP Epitaxial Planar Silicon Transistor High-Frequency Amplifier Applications
From old datasheet system
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| File Size |
128.30K /
5 Page |
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PHILIPS[Philips Semiconductors]
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| Part No. |
SA620DK SA620
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| OCR Text |
...K Package
LNA ENABLE 1 LNA GND 2 LNA IN 3 LNA GND 4 LNA GND 5 20 VCC 19 LNA GND 18 LNA OUT 17 LNA BIAS 16 MIXER IN 15 MIXER GND 14 MIXER BY...7 8
* Internal VCO automatic leveling loop * Monotonic VCO frequency vs control
voltage
OSC1 ... |
| Description |
Low voltage LNA mixer and VCO - 1GHz
Low voltage LNA, mixer and VCO - 1GHz
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| File Size |
330.13K /
11 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFL48V1920
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| OCR Text |
2.0GHz BAND 60W GaAs FET DESCRIPTION
The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz ban...7 0 0 p F(G R4 0 ) C6 ,C9 ,C1 6 ,C1 7 ,C1 8 ,C1 9 ,C2 0 ,C2 1 :4 .7 u F(CM 3 2 ) C1 0 ,C1 1 ,C1 4 ,C... |
| Description |
From old datasheet system
1.9-2.0GHz BAND 60W GaAs FET
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| File Size |
324.67K /
6 Page |
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SIEMENS[Siemens Semiconductor Group]
Infineon
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| Part No. |
BFP183R Q62702-F1594
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| OCR Text |
2 mA to 28 mA * fT = 8 GHz F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking...7 10
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| Description |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA)
From old datasheet system
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| File Size |
58.40K /
7 Page |
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it Online |
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SIEMENS[Siemens Semiconductor Group]
Infineon
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| Part No. |
BFP183W Q62702-F1503
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| OCR Text |
2 mA to 30 mA * fT = 8 GHz F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking...7 10
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-5
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10 s 10 tp
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10 0 -7... |
| Description |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system
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| File Size |
59.61K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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