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  2.0-channel Datasheet PDF File

For 2.0-channel Found Datasheets File :: 107002    Search Time::1.828ms    
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    TK20X60U

Toshiba Semiconductor
Part No. TK20X60U
OCR Text ... gss 30 v dc (note 1) i d 20 drain current pulse (note 1) i dp 40 a drain power dissipation (tc = 25c) p d 150 w single p...channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using co...
Description Switching Regulator Applications

File Size 186.74K  /  6 Page

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    RJF0605DPD RJF0605DPD-00-J3

Renesas Electronics Corporation
Part No. RJF0605DPD RJF0605DPD-00-J3
OCR Text ... v drain current i d note3 20 a body-drain diode reverse drain current i dr 20 a avalanche current i ap note 2 6.7 a avalanche energy e ar note 2 192 mj channel dissipation pch note 1 40 w channel temperature tch...
Description Silicon N Channel MOS FET Series Power Switching
   Silicon N Channel MOS FET Series Power Switching

File Size 84.34K  /  8 Page

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    RJF0604JPD-00-J3 RJF0604JPD12

Renesas Electronics Corporation
Part No. RJF0604JPD-00-J3 RJF0604JPD12
OCR Text ... main characteristics 40 30 20 10 0 0 50 100 150 200 100 10 1 0.1 0.01 0.1 1 10 100 20 10 0 2 046810 v gs = 3 v 0 0 12345 5 4 3 2 1 9 v...channel dissipation pch (w) case temperature tc (c) power vs. temperature derating drain to ...
Description Silicon N Channel MOS FET Series Power Switching
   Silicon N Channel MOS FET Series Power Switching

File Size 83.92K  /  8 Page

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    椋???″????浣?涓??)??????
Part No. MRF6S19100HSR3
OCR Text ...ductor typical characteristics ?20 ?5 ?10 ?15 d , drain efficiency (%) irl, input return loss (db) im3 (dbc), acpr (dbc) 1990 1930 irl g ps...channel bandwidth, par = 9.8 db @ 0.01% probability (ccdf) 15.8 15.6 15.4 15.2 15 1950 1980 1.2288 ...
Description RF Power Field Effect Transistors

File Size 388.18K  /  12 Page

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    INTERSIL[Intersil Corporation]
Part No. JANSR2N7439
OCR Text ...ed JANSR2N7439 -200 -200 5 3 15 20 25 10 0.20 15 5 15 -55 to 150 300 1.0 UNITS V V A A A V W W W/oC A A A oC oC g Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description Formerly Available As FSL923A0R4/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
Formerly Available As FSL923A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs

File Size 57.63K  /  8 Page

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    HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Part No. JANSR2N7440
OCR Text .... . . . . . . -100 -100 10 6 30 20 56 22 0.45 30 10 30 -55 to 150 300 4.4 UNITS V V A A A V W W W/oC A A A oC oC g CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a str...
Description 10 A, 100 V, P-CHANNEL, Si, POWER, MOSFET
Formerly Available as FSS913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs

File Size 70.47K  /  8 Page

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    NXP Semiconductors N.V.
Part No. LPC2377FBD144
OCR Text ...d flat package; 144 leads; body 20 ? 20 ? 1.4 mm sot486-1 lpc2378fbd144 lqfp144 plastic low profile quad flat package; 144 leads; body ...channel 0. p0[5]/ i2srx_ws/ td2/cap2[1] 115 [1] i/o p0[5] ? general purpose digital input/output pi...
Description ARM7 with 512KB flash, 58 KB SRAM, Ethernet, and 10-bit ADC

File Size 399.21K  /  69 Page

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    TOSHIBA
Part No. TPCA8083
OCR Text ...e as i ar t ch t stg rating 40 20 60 180 84 3.3 1.9 257 60 175 -55 to 150 unit v a w w w mj a note: using continuously under heavy ...channel-to-case thermal resistance channel-to-ambient thermal resistance channel-to-ambient thermal ...
Description MOSFETs
Power MOSFET (N-ch single 30V<VDSS≤60V)

File Size 234.24K  /  9 Page

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ...Max. -74 -52 -260 3.8 200 1.3 20 930 -38 20 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resis...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Re...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ... Max. -74 -52 -260 200 1.3 20 930 -38 20 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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