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  18.05 Datasheet PDF File

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    Freescale (Motorola)
Part No. MRF18030ASR3 MRF18030ALSR3 MRF18030ALR3
OCR Text ...applications. Specified for GSM 1805-1880 MHz. * Typical GSM Performance: Power Gain - 14 dB (Typ) @ 30 Watts Efficiency - 50% (Typ) @ 30 Watts * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linear...
Description GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET

File Size 205.79K  /  8 Page

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    Freescale Semiconductor
Part No. MRF18090BR3
OCR Text ... RETURN LOSS (dB) -5 f = 1805 MHz Zload Zo = 10 f = 1990 MHz www.DataSheet4U.com f = 1990 MHz f = 1805 MHz Zsource VDD = 26 V, IDQ = 750 mA, Pout = 90 Watts (CW) f MHz 1805 1880 1930 1990 Zsource 1.10 - j5.8...
Description LATERAL N-CHANNEL RF POWER MOSFETs

File Size 409.16K  /  8 Page

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    Freescale Semiconductor
Part No. MD7IC18120GNR1 MD7IC18120NR1
OCR Text ...ching that makes it usable from 1805 to 1880 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. * Typical Doherty Single--Carrier W--CDMA Performance: VDD =...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 638.72K  /  18 Page

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    MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3

MOTOROLA[Motorola, Inc]
Part No. MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3
OCR Text ...rformance, Full Frequency Band (1805 - 1880 MHz) Power Gain -- 13 dB (Typ) @ 60 Watts Efficiency -- 45% (Typ) @ 60 Watts * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Pr...
Description MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS

File Size 399.98K  /  8 Page

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    ONSEMI[ON Semiconductor]
Part No. MC100EP16VS MC100EP16VSD MC100EP16VSDR2 MC100EP16VSDR2G MC3100EP16VSDT MC3100EP16VSDTG MC100EP16VSMNR4G MC100EP16VSDG MC100EP16VSDTR2 MC100EP16VSDTR2G MC100EP16VSMNR4
OCR Text ...ent D D 0.5 -150 2105 2075 1355 1805 VEE 2.0 1905 Min 30 2155 Typ 36 Max 42 2405 Min 31 2155 25C Typ 38 Max 44 2405 Min 32 2155 85C Typ 40 Max 48 2405 Unit mA mV mV 1355 1490 See Fig.2 2230 1605 1355 1520 See Fig.2 1605 ...
Description 3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing

File Size 164.79K  /  12 Page

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    MRF6S18100NR108 MRF6S18100NBR1

Freescale Semiconductor, Inc
Freescale Semiconductor...
Part No. MRF6S18100NR108 MRF6S18100NBR1
OCR Text ...atts Avg., Full Frequency Band (1805 - 1880 MHz or 1930- 1990 MHz) Power Gain -- 15 dB Drain Efficiency -- 35% Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 76 dBc EVM -- 2% rms * Capable of Handling 5...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 763.24K  /  21 Page

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    MRF6S18060NBR1 MRF6S18060NR1 MRF6S18060NR108

Freescale Semiconductor, Inc
Part No. MRF6S18060NBR1 MRF6S18060NR1 MRF6S18060NR108
OCR Text ...atts Avg., Full Frequency Band (1805- 1880 MHz or 1930- 1990 MHz) Power Gain -- 15.5 dB Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 76 dBc EVM -- 2% rms * Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 762.03K  /  21 Page

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    MOTOROLA
Part No. MRF18085AL
OCR Text ...s. Specified for GSM - GSM EDGE 1805- 1880 MHz. * GSM and GSM EDGE Performance, Full Frequency Band (1805 - 1880 MHz) Power Gain - 15 dB (Typ) @ 85 Watts CW Efficiency - 52% (Typ) @ 85 Watts CW * Capable of Handling 5:1 VSWR, @ 26 Vdc, 1840...
Description 1805鈥?880 MHz, 85 W, 26 V GSM/GSM EDGE Lateral N鈥揅hannel RF Power MOSFETs

File Size 388.15K  /  8 Page

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    B39182-B4166-U410

EPCOS
Part No. B39182-B4166-U410
OCR Text ...y Maximum insertion attenuation 1805,0 ...1880,0 Amplitude ripple (p-p) 1805,0 ...1880,0 Input VSWR 1805,0 ...1880,0 Output VSWR 1805,0 ...1880,0 Attenuation 10,0 370,0 1300,0 1705,0 1920,0 1980,0 2530,0 2680,0 3400,0 3975,0 4200,0 4920,0 5...
Description Low-Loss Filter for Mobile Communication

File Size 72.09K  /  6 Page

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    MW6IC2015GNBR1 MW6IC2015NBR108

Freescale Semiconductor, Inc
Freescale Semiconductor, In...
Part No. MW6IC2015GNBR1 MW6IC2015NBR108
OCR Text ...hip design makes it usable from 1805 to 1990 MHz. The linearity performances 1805 - 1990 MHz, 15 W, 26 V cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS, GSM/GSM EDGE, CDMA TDMA, CDMA, W - CDMA and TD - SCDMA. RF ...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 1,117.72K  /  28 Page

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