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Freescale (Motorola)
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Part No. |
MRF18030ASR3 MRF18030ALSR3 MRF18030ALR3
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OCR Text |
...applications. Specified for GSM 1805-1880 MHz. * Typical GSM Performance: Power Gain - 14 dB (Typ) @ 30 Watts Efficiency - 50% (Typ) @ 30 Watts * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linear... |
Description |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
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File Size |
205.79K /
8 Page |
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Freescale Semiconductor
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Part No. |
MRF18090BR3
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OCR Text |
... RETURN LOSS (dB)
-5
f = 1805 MHz
Zload
Zo = 10
f = 1990 MHz
www.DataSheet4U.com
f = 1990 MHz
f = 1805 MHz
Zsource
VDD = 26 V, IDQ = 750 mA, Pout = 90 Watts (CW) f MHz 1805 1880 1930 1990 Zsource 1.10 - j5.8... |
Description |
LATERAL N-CHANNEL RF POWER MOSFETs
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File Size |
409.16K /
8 Page |
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Freescale Semiconductor
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Part No. |
MD7IC18120GNR1 MD7IC18120NR1
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OCR Text |
...ching that makes it usable from 1805 to 1880 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. * Typical Doherty Single--Carrier W--CDMA Performance: VDD =... |
Description |
RF LDMOS Wideband Integrated Power Amplifiers
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File Size |
638.72K /
18 Page |
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MOTOROLA[Motorola, Inc]
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Part No. |
MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3
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OCR Text |
...rformance, Full Frequency Band (1805 - 1880 MHz) Power Gain -- 13 dB (Typ) @ 60 Watts Efficiency -- 45% (Typ) @ 60 Watts * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Pr... |
Description |
MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
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File Size |
399.98K /
8 Page |
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MOTOROLA
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Part No. |
MRF18085AL
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OCR Text |
...s. Specified for GSM - GSM EDGE 1805- 1880 MHz. * GSM and GSM EDGE Performance, Full Frequency Band (1805 - 1880 MHz) Power Gain - 15 dB (Typ) @ 85 Watts CW Efficiency - 52% (Typ) @ 85 Watts CW * Capable of Handling 5:1 VSWR, @ 26 Vdc, 1840... |
Description |
1805鈥?880 MHz, 85 W, 26 V GSM/GSM EDGE Lateral N鈥揅hannel RF Power MOSFETs
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File Size |
388.15K /
8 Page |
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EPCOS
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Part No. |
B39182-B4166-U410
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OCR Text |
...y Maximum insertion attenuation 1805,0 ...1880,0 Amplitude ripple (p-p) 1805,0 ...1880,0 Input VSWR 1805,0 ...1880,0 Output VSWR 1805,0 ...1880,0 Attenuation 10,0 370,0 1300,0 1705,0 1920,0 1980,0 2530,0 2680,0 3400,0 3975,0 4200,0 4920,0 5... |
Description |
Low-Loss Filter for Mobile Communication
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File Size |
72.09K /
6 Page |
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Freescale Semiconductor, Inc Freescale Semiconductor, In...
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Part No. |
MW6IC2015GNBR1 MW6IC2015NBR108
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OCR Text |
...hip design makes it usable from 1805 to 1990 MHz. The linearity performances 1805 - 1990 MHz, 15 W, 26 V cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS, GSM/GSM EDGE, CDMA TDMA, CDMA, W - CDMA and TD - SCDMA. RF ... |
Description |
RF LDMOS Wideband Integrated Power Amplifiers
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File Size |
1,117.72K /
28 Page |
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it Online |
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Price and Availability
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