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KEC[KEC(Korea Electronics)]
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| Part No. |
KMB7D1DP30QA
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| OCR Text |
...-1 20 -25 100 -3 25 m nA V IDS=-10 A, VGS=0V, VGS=0V, VDS=-30v -30 -1 A V SYMBOL
)
TEST CONDITION MIN. TYP. MAX. UNIT
VDS=VGS, ID=-250 A VGS=-10V, ID=-7.1A
2007. 4. 17
Revision No : 0
2/5
KMB7D1DP30QA
Fig1. ID - VDS
D... |
| Description |
Dual P-Ch Trench MOSFET
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| File Size |
469.26K /
5 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AON6424
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| OCR Text |
...nt parameter typ max t c =25c 2 10 t c =100c avalanche energy l=0.05mh c power dissipation b g d s top view 1 2 3 4 8 7 6 5 www.freescale...30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 0.8 1.2 1.7 v i d(on) 90 a 6... |
| Description |
30v N-Channel MOSFET
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| File Size |
402.81K /
6 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AON6418
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| OCR Text |
... a d 3.5 53 5 44 w 25 t c =25c 10 t c =100c p dsm w t a =70c 3.8 t a =25c 6 typ max v t c =25c t c =100c 127 pulsed drain current c contin...30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.2 1.8 2.2 v 4 5 t j =125c ... |
| Description |
30v N-Channel AlphaMOS
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| File Size |
289.74K /
6 Page |
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it Online |
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KEC[KEC(Korea Electronics)]
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| Part No. |
KMB8D2N60QA
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| OCR Text |
...ote 1. Pulse Test : Pulse width 10 , Duty cycle 1% VSDF* VGS=0V, IDR=1.7A, 0.74 1.0 V Qgs* Qgd* td(on)* tr* td(off)* tf* VDD=30v, VGS=10V RL=3.6 , RG=3 6.0 14.4 8.2 5.5 29.7 5.2 ns 24.2 30 nC Ciss Coss Crss VDS=30v, VGS=0V, f=1MHz 1920 155 ... |
| Description |
N-Ch Trench MOSFET
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| File Size |
463.37K /
4 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AON6416
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| OCR Text |
...bv dss 30 v v ds =30v, v gs =0v 10 t j =55c 50 i gss 100 na v gs(th) gate threshold voltage 1.2 1.8 2.4 v i d(on) 110 a 6.8 8 t j =125c 9.2 11 11 14 m w g fs 40 s v sd 0.7 1 v i s 35 a c iss 950 1190 1430 pf c oss 150 220 290 pf c rss 80 13... |
| Description |
30v N-Channel MOSFET
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| File Size |
451.60K /
7 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AON6414AL
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| OCR Text |
... r ds(on) (at v gs =4.5v) < 10.5m w symbol v ds v gs v 20 gate-source voltage drain-source voltage 30 the aon6414a uses advanced trench ...30v g d s top view 1 2 3 4 8 7 6 5 v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s s... |
| Description |
30v N-Channel MOSFET
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| File Size |
375.25K /
6 Page |
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it Online |
Download Datasheet |
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