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  0.95-2.15 Datasheet PDF File

For 0.95-2.15 Found Datasheets File :: 125742    Search Time::3.735ms    
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    IRF3315

International Rectifier
Part No. IRF3315
OCR Text ... VDSS = 150V G S RDS(on) = 0.07 ID = 27A Description Fifth Generation HEXFETs from International Rectifier utilize advanced process...95 ID = 12A 11 nC VDS = 120V 47 VGS = 10V, See Fig. 6 and 13 --- VDD = 75V --- ID = 12A ns --- RG =...
Description Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

File Size 121.12K  /  8 Page

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    IRF36 IRF-36

VISAY[Vishay Siliconix]
Part No. IRF36 IRF-36
OCR Text ...2 2.52 2.52 2.52 2.52 2.52 2.52 0.796 0.796 0.796 0.796 0.796 0.796 0.796 0.796 0.796 0.796 0.796 0.796 SELFRES. FREQ. MIN. (MHz) 320 320 32...95 1.85 1.40 RATED DCR DC MAX. CURRENT () (mA) 0.15 0.16 0.17 0.19 0.21 0.24 0.28 0.32 0.36 0.41 0.4...
Description Inductors Epoxy Conformal Coated, Axial Leaded

File Size 113.79K  /  1 Page

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    IRF530FI IRF530 3003

SGS Thomson Microelectronics
STMicroelectronics
Part No. IRF530FI IRF530 3003
OCR Text ...V DSS 100 V 100 V R DS(on) < 0.16 < 0.16 ID 16 A 11 A TYPICAL RDS(on) = 0.12 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED R...95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 E mm TYP. MAX...
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

File Size 46.69K  /  6 Page

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    IRF530FP 5758

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. IRF530FP 5758
OCR Text 0.16 ID 10 A s s TYPICAL RDS(on) = 0.12 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED...95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1....
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system

File Size 76.48K  /  5 Page

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    IRF7807VD1

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF7807VD1
OCR Text ...nt BVDSS RDS(on) VGS(th) IDSS 1.0 20 2.0 IGSS QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf (off) Min 30 Typ - 17 Max - 25 Unit...95 94 93 92 91 90 89 88 Vin=24V Vin=14V Vin=10V Vin=14V Vin=10V 87 86 1 2 3 Load current (A) 4...
Description Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 116.12K  /  9 Page

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    IRF7807VD2 IRF7807VD2TR

IRF[International Rectifier]
Part No. IRF7807VD2 IRF7807VD2TR
OCR Text ...nt BVDSS RDS(on) VGS(th) IDSS 1.0 50 6.0 IGSS QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf (off) Min 30 Typ - 17 Max - 25 Unit...95 94 93 92 91 90 89 88 Vin=24V Vin=14V Vin=10V Vin=14V Vin=10V 87 86 1 2 3 Load current (A) 4...
Description 30V FETKY - MOSFET and Schottky Diode in a SO-8 package
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 113.54K  /  9 Page

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    IRF7807 IRF7807A IRF7807ATR IRF7807TR

IRF[International Rectifier]
Part No. IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text ...V(BR)DSS RDS(on) VGS(th) IDSS 1.0 30 150 IGSS Qg Q gs1 Q gs2 Qgd QSW Q oss Rg td(on) tr td (off) tf 12 2.1 0.76 2.9 3.66 14 1.2 12 17 25 6 5...95 5V Supply : Q1=Q2=IRF7807 90 89 88 87 86 85 84 1 1.5 2 2.5 3 3.5 Load Current (A) 4 4.5 5 V...
Description 8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
Chip-Set for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 238.61K  /  8 Page

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    IRF9140

SEMELAB LTD
SEME-LAB[Seme LAB]
Part No. IRF9140
OCR Text 0.675) 16.64 (0.655) P-CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES * HERMETICALLY SEALED TO-3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0...
Description P-CHANNEL POWER MOSFET

File Size 21.26K  /  2 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text 0.150 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET de...95 0.85 0.75 -40 0 40 80 120 160 0 0 -10 -20 -30 -40 -50 ...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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    IRF9520 FN2281

INTERSIL[Intersil Corporation]
Part No. IRF9520 FN2281
OCR Text 0.600 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy i...95 200 0.85 100 CRSS 0.75 -40 0 40 80 120 160 0 0 -10 -20 ...
Description 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET

File Size 57.36K  /  7 Page

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For 0.95-2.15 Found Datasheets File :: 125742    Search Time::3.735ms    
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