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  0.6-0.6mm Datasheet PDF File

For 0.6-0.6mm Found Datasheets File :: 16933    Search Time::2.907ms    
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    HGT1S7N60A4S9A HGTG7N60A4 HGTP7N60A4

FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S7N60A4S9A HGTG7N60A4 HGTP7N60A4
OCR Text ...perature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....6 5.9 9.0 37 48 11 11 100 45 55 120 60 MAX 250 2 2.7 2.2 7.0 250 45 60 150 75 UNITS V V A mA V V V n...
Description 600V, SMPS Series N-Channel IGBT 34 A, 600 V, N-CHANNEL IGBT, TO-263AB
600V/ SMPS Series N-Channel IGBT
600V SMPS Series N-Channel IGBT

File Size 153.85K  /  8 Page

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    HGT1S7N60A4S HGTD7N60A4S HGTP7N60A4 HGTG7N60A4 FN4826

INTERSIL[Intersil Corporation]
Part No. HGT1S7N60A4S HGTD7N60A4S HGTP7N60A4 HGTG7N60A4 FN4826
OCR Text ...perature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....6 5.9 9.0 37 48 11 11 100 45 55 120 60 MAX 250 2 2.7 2.2 7.0 250 45 60 150 75 UNITS V V A mA V V V n...
Description From old datasheet system
600V SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBT
600V/ SMPS Series N-Channel IGBT

File Size 166.85K  /  11 Page

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    IRF7204 IRF7204TR

International Rectifier
Part No. IRF7204 IRF7204TR
OCR Text ...D 2 VDSS = -20V RDS(on) = 0.060 ID = -5.3A 3 6 4 5 To p V ie w Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon ar...
Description TRI N PLUG M 0-48 NO SEAL
Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A)
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 141.26K  /  9 Page

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    IRF7205 IRF7205PBF IRF7205TR

IRF[International Rectifier]
Part No. IRF7205 IRF7205PBF IRF7205TR
OCR Text ...D 2 VDSS = -30V RDS(on) = 0.070 ID = -4.6A 3 6 4 5 T o p View Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon are...
Description -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 162.31K  /  9 Page

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    IRF730APBF

IRF[International Rectifier]
Part No. IRF730APBF
OCR Text ... VDSS 400V Rds(on) max 1.0 ID 5.5A TO-220AB G DS Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM P...6-32 or M3 screw Max. 5.5 3.5 22 74 0.6 30 4.6 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1...
Description SMPS MOSFET

File Size 180.64K  /  8 Page

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    IRF730A IRF730 IRF730APBF

IRF[International Rectifier]
Part No. IRF730A IRF730 IRF730APBF
OCR Text ... VDSS 400V Rds(on) max 1.0 ID 5.5A TO-220AB G DS Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM P...6-32 or M3 screw Max. 5.5 3.5 22 74 0.6 30 4.6 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1...
Description 400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
SMPS MOSFET

File Size 100.63K  /  8 Page

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    IRF7379

IRF[International Rectifier]
Part No. IRF7379
OCR Text ... H AN N E L MO S FET RDS(on) 0.045 0.090 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processin...6 46 2.5 0.02 20 5.0 -55 to + 150 -5.0 P-Channel -30 -4.3 -3.4 -34 Units A W W/C V V/ns C ...
Description Power MOSFET

File Size 211.55K  /  10 Page

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    IRF737LC

IRF[International Rectifier]
Part No. IRF737LC
OCR Text 0.75 ID = 6.1A HEXFET(R) Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated Description This new series of Low Charge HEXFETs achie...
Description 300V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
HEXFET?? Power MOSFET

File Size 144.10K  /  8 Page

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    IRF7413 7413

International Rectifier
Part No. IRF7413 7413
OCR Text ... seconds Max. 12 9.6 96 2.5 0.02 20 1.0 -55 to + 150 300 (1.6mm from case ) Units A W W/C V V/ns C Thermal Resistance Symbol RJL RJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. --- --- Max. 20 50 ...
Description Power MOSFET(Vdss=30V, Id=12A)
Power MOSFET(Vdss=30V/ Id=12A)

File Size 121.55K  /  8 Page

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    IRFL110

IRF[International Rectifier]
Part No. IRFL110
OCR Text ...nts D VDSS = 100V RDS(on) = 0.54 G S ID = 1.5A Description Third Generation HEXFETs from International Rectifier provide the d...6.9 16 15 9.4 4.0 6.0 180 81 15 0.54 4.0 --- 25 250 100 -100 8.3 2.3 3.8 --- --- --- --- --- --- ---...
Description Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)

File Size 241.54K  /  8 Page

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For 0.6-0.6mm Found Datasheets File :: 16933    Search Time::2.907ms    
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