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  0.32a Datasheet PDF File

For 0.32a Found Datasheets File :: 1265    Search Time::4.188ms    
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    IDT
Part No. IDT74FCT521A IDT54FCT521A IDT74FCT521C IDT74FCT521B IDT74FCT521 IDT54FCT521C IDT54FCT521B IDT54FCT521 IDT74FCT521ASO8
OCR Text ...r Dissipation DC Output Current 0 to +70 -55 to +125 -55 to +125 0.5 120 -55 to +125 -65 to +135 -65 to +150 0.5 120 C C C W mA -0.5 to VCC ...32A VCC = Min IOH = -300A VIN = VIH or VIL IOH = -12mA MIL IOH = -15mA COM'L VCC = 3V, VIN = VLC or ...
Description FAST CMOS 8-BIT IDENTITY COMPARATOR

File Size 87.22K  /  6 Page

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    STMicro
Part No. TYN0516---TYN816
OCR Text ...to ambient Parameter Value 60 2.0 Unit C/W C/W Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1...32A tp= 380s VDRM VRRM Rated Rated Linear slope up to VD =67%VDRM gate open VD=67%VDRM ITM= 32A V...
Description SCR

File Size 58.14K  /  4 Page

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    HD26C32ANBSP HD26C32A

HITACHI[Hitachi Semiconductor]
Part No. HD26C32ANBSP HD26C32A
OCR Text ...RS-422A/423A Input sensitivity: 0.2V (In the range of 7 V of common mode input voltage) Propagation delay time: 19 ns typ Input hysteresis w...32A HD26C32A Pin Arrangement IN A1 1 IN A2 2 OUT A 3 Enable 4 OUT C 5 IN C2 6 IN C1 7 GND 8 ...
Description    Quadruple Differential Line Receivers With 3 State Outputs
From old datasheet system

File Size 85.15K  /  14 Page

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    IRGIB10B60KD1 IRGIB10B60KD1P IRGIB10B60KD1PBF

IRF[International Rectifier]
Part No. IRGIB10B60KD1 IRGIB10B60KD1P IRGIB10B60KD1PBF
OCR Text ...500 20 44 22 -55 to +175 C 300 (0.063 in. (1.6mm) from case) 10 lbf.in (1.1N.m) W V Units V c Diode Continuous Forward Current Dio...32A, Vp = 600V VCC=500V,VGE = +15V to 0V,RG = 50 TJ = 150C, Vp = 600V, RG = 50 VCC=360V,VGE = +15V t...
Description 600V Low-Vceon Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 383.42K  /  12 Page

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    Maxim Integrated Products, Inc.
Maxim Integrated Products Inc
Part No. MAX6509HAUK-T MAX6509
OCR Text ...mperature threshold accuracy of 0.5C (typ) or 4.7C (max). They typically consume 32A supply current. Hysteresis is pin selectable to 2C or 10C. The MAX6509/MAX6510 are available in 5-pin and 6-pin SOT23 packages, respectively. __________...
Description Resistor-Programmable SOT Temperature Switches
From old datasheet system
TEMPERATURE SENSOR,TSOP,6PIN,PLASTIC

File Size 171.09K  /  8 Page

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    Mitsumi
Part No. MM1423 MM1422
OCR Text ...ted Min. Typ. Max. Unit 33.5 40.0 mA 9.5 4.5 11.0 6.0 0.2 12.0 7.0 1.0 V V V Symbol ICC VFSH VFSM VFSL CTV1 CTV2 CTV3 CTL1 CTL2 CTL3 CTR1 CTR2 CTR3 GV1 FV1 DG1 DP1 VOV1 VIV1 VOV1 GV2 GV3 FV2 FV3 DG2 DG3 VIN=1VP-P f=4.43MHz -70 -...
Description AV Switch for I2C BUS Control, 4-input, 3-output and Canal Plus Compatible
From old datasheet system

File Size 316.25K  /  13 Page

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    NES240-48 NES120 NES120-24 NES240-24 NES240-28 NES60-24 NES30-24

TE Connectivity, Ltd.
LAMBDA[DENSEI-LAMBDA]
Part No. NES240-48 NES120 NES120-24 NES240-24 NES240-28 NES60-24 NES30-24
OCR Text ...lid or standard/Conductor sizes 0.2 ~ 2.5 mm2/24 ~ 14AWG. Standard CE marking: Low Voltage Directive Safety: EN60950/UL1950/CAS950/UL508 ...32A 25/50A 28/56A 60mV (from 85 ~ 132VAC or 170 ~ 265VAC, constant load) 120mV (from no load to full...
Description DIN rail mountable type 30 ~ 240W DIN轨道贴装0240

File Size 670.72K  /  3 Page

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    FQA32N20C

FAIRCHILD[Fairchild Semiconductor]
Part No. FQA32N20C
OCR Text ... * * * * * 32A, 200V, RDS(on) = 0.082 @VGS = 10 V Low gate charge ( typical 82.5 nC) Low Crss ( typical 185 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G TO-3P G DS FQA Series S Absol...
Description 200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
From old datasheet system

File Size 892.56K  /  8 Page

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    FQPF32N20C FQP32N20C

FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
Part No. FQPF32N20C FQP32N20C
OCR Text ... * * * * * 28A, 200V, RDS(on) = 0.082 @VGS = 10 V Low gate charge ( typical 82.5 nC) Low Crss ( typical 185 pF) Fast switching 100% avalanch...32A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 28A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25...
Description 200V N-Channel Advance Q-FET C-Series
From old datasheet system
200V N-Channel MOSFET

File Size 1,181.06K  /  10 Page

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    IRG4ZH50KD

IRF[International Rectifier]
Part No. IRG4ZH50KD
OCR Text ...in. -- -- -- -- Typ. -- -- 0.44 6.0(0.21) Max. 0.60 1.20 -- -- Units C/W g (oz) * Assumes device soldered to 3.0 oz. Cu on 3...32A trr - (n s) 20 I F = 32A I F = 16A I F = 8.0A 100 10 0 100 di f /dt - (A / s) ...
Description 600V Copack IGBT in a SMD-10 package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 241.66K  /  10 Page

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