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Inchange Semiconductor ...
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| Part No. |
2N3863
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| OCR Text |
... u r a t i o n v o l t a g e 1 0 0 % a v a l a n c h e t e s t e d m i n i m u m l o t - t o - l o t v a r i a t i o n s f o r r o b u s t d e v i c e p e r f o r m a n c e a n d r e l i a b l e o p e r a t i o n . a p p l i c a t i o n s... |
| Description |
isc Silicon NPN Power Transistor
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| File Size |
252.78K /
2 Page |
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Inchange Semiconductor ...
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| Part No. |
2N3864
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| OCR Text |
... u r a t i o n v o l t a g e 1 0 0 % a v a l a n c h e t e s t e d m i n i m u m l o t - t o - l o t v a r i a t i o n s f o r r o b u s t d e v i c e p e r f o r m a n c e a n d r e l i a b l e o p e r a t i o n . a p p l i c a t i o n s... |
| Description |
isc Silicon NPN Power Transistor
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| File Size |
253.35K /
2 Page |
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it Online |
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Inchange Semiconductor ...
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| Part No. |
2N3865
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| OCR Text |
... u r a t i o n v o l t a g e 1 0 0 % a v a l a n c h e t e s t e d m i n i m u m l o t - t o - l o t v a r i a t i o n s f o r r o b u s t d e v i c e p e r f o r m a n c e a n d r e l i a b l e o p e r a t i o n . a p p l i c a t i o n s... |
| Description |
isc Silicon NPN Power Transistor
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| File Size |
253.14K /
2 Page |
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it Online |
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Inchange Semiconductor ...
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| Part No. |
2N3866
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| OCR Text |
... collector current-continuous 0.4 a p c collector power dissipation @t c =25 3.5 w t j junction temperature 200 t stg storage temperature range -65~+200
inchange semiconductor ... |
| Description |
High Gain Bandwidth Product fT= 500 MHz (Min.)
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| File Size |
91.97K /
2 Page |
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it Online |
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Inchange Semiconductor ...
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| Part No. |
2N5191
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| OCR Text |
...taining voltage 2n5192 i c =0.1a; i b =0 80 v v cesat-1 collector-emitter saturation voltage i c =1.5a ;i b =0.15a 0.6 v v cesat-2 collector-emitter saturation voltage i c =4a ;i b =1a 1.4 v v be base-emitter on voltag... |
| Description |
Silicon NPN Power Transistors
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| File Size |
36.46K /
3 Page |
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it Online |
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Continental Device Indi...
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| Part No. |
2N5191
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| OCR Text |
...v ceo* ( sus ) i c =100ma, i b =0 2n5191 60 - - v 2n5192 80 - - v collector cut off current i cbo v cb =rated v cbo, i e =0 - - 0.1 ma i cex v ce =rated v ceo , - - 0.1 ma vbe=1.5v v ce =rated v ceo , --2ma v be =1.5v,t c =125 oc i ceo v c... |
| Description |
NPN EPITAXIAL SILICON POWER TRANSISTORS
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| File Size |
56.94K /
4 Page |
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Sirectifier Global Corp...
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| Part No. |
2N7002PT
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| OCR Text |
0.25amp 60vol t application -servomotor control -power mosfet gate drivers -other switching applications feature -small surface mounting type -high density cell design for low r ds(on) -suitable for high packing density ... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor - 0.25Amp 60Volt
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| File Size |
174.82K /
5 Page |
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it Online |
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Quanzhou Jinmei Electro...
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| Part No. |
2SA663 2SA663-15
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| OCR Text |
...akdown voltage i c =-25ma ;i b =0 -100 v v (br)cbo collector-base breakdown voltage i c =-1ma ;i e =0 -100 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i c =0 -5 v v cesat collector-emitter saturation voltage ... |
| Description |
Silicon PNP Power Transistors
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| File Size |
35.87K /
3 Page |
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it Online |
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