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				永盛国际集团 Wing Shing Computer Components
Part No.	2SD235
OCR Text	...fT Test Condition VCB= 50V , IE=0 VEB= 5V , IC=0 VCE= 5V , IC=0.5A IC=3A , IB=0.3A VCE= 2V , IC=0.5A Min Typ Max 10 10 240 1.0 18 Unit A A 40 V MHZ Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com ...
Description	NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
File Size	68.47K / 1 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SD2479
OCR Text	...upply with the radial taping 0.650.1 2.50.1 0.850.1 1.00.1 0.8 C 90 0.8 C 16.01.0 0.70.1 0.70.1 1.150.2 1.150.2 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter volta...
Description	Silicon NPN epitaxial planar type
File Size	73.70K / 3 Page	View it Online	Download Datasheet

				ROHM[Rohm]
Part No.	2SD2537
OCR Text	...uration voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) !External dimensions (Units : mm) 2SD2537 4.0 1.0 2.5 0.5 1.5 0.4 (1) 3.0 0.5 (3) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector ...
Description	Medium Power Transistor (25V 1.2A)
File Size	58.92K / 2 Page	View it Online	Download Datasheet

				Panasonic Semiconductor
Part No.	2SD2620 2SD2620J
OCR Text	0.05 -0.03 1.000.05 0.800.05 For low-frequency amplification I Features * High forward current transfer ratio hFE * Low collector to emitter saturation voltage VCE(sat) * High emitter to base voltage VBEO * SS-mini type package 0.12+...
Description	SILICON NPN EPITAXIAL PLANER TYPE(FOR LOW-FREQUENCY AMPLIFICATION)
File Size	41.66K / 1 Page	View it Online	Download Datasheet

				Panasonic Semiconductor
Part No.	2SD2621
OCR Text	0.33+0.05 -0.02 Unit: mm 0.10+0.05 -0.02 Features * High forward current transfer ratio hFE * Low collector-emitter saturation voltage VCE(sat) * High emitter-base voltage (Collector open) VEBO 3 0.15 min. 0.800.05 1.200.05 ...
Description	SILICON NPN EPITAXIAL PLANAR TYPE FOR LOW-FREQUENCY DRIVER AMPLIFICATION
File Size	72.62K / 3 Page	View it Online	Download Datasheet

				Panasonic Semiconductor
Part No.	2SD2693A
OCR Text	...0.5 3.20.1 1.40.2 1.60.2 0.80.1 2.60.1 Absolute Maximum Ratings TC = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak colle...
Description	POWER TRANSISTORS SILICON NPN TRIPLE DIFFUSION PLANAR TYPE
File Size	52.63K / 2 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SJ608
OCR Text	...ng. 2.6 1.4 1.2 7.5 1.0 8.5 1.6 0.5 0.5 1 2 3 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Pow...
Description	ULTRAHIGH SPEED SWITCHING APPLICATIONS
File Size	25.94K / 3 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SK1094
OCR Text	...st conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 8 A, VGS = 10 V * -------------------------------------------------------------------------------------- -----------...
Description	SILICON N-CHANNEL MOS FET
File Size	18.72K / 3 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SK2059L 2SK2059S 2SK2059
OCR Text	...BR)GSS I GSS Min 600 30 -- -- 2.0 -- 1.2 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 3.8 2.0 295 70 12 8 25 65 30 0.9 220 Max -- -- 10 100 3.0 5.0 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F =3 A, VGS = 0...
Description	SILICON N-CHANNEL MOS FET
File Size	46.78K / 9 Page	View it Online	Download Datasheet

				Renesas
Part No.	2SK2554
OCR Text	...(BR)GSS I GSS Min 60 20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to dra...
Description	Transistors>Switching/MOSFETs
File Size	80.80K / 13 Page	View it Online	Download Datasheet

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