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Renesas Electronics Corporation
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Part No. |
H5N2306PF-15
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OCR Text |
...the military, including but not limited to the development of weapons of mass destruction. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is pro... |
Description |
Silicon N Channel MOS FET High Speed Power Switching
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File Size |
105.20K /
12 Page |
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IRF[International Rectifier]
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Part No. |
IRF3711 IRF3711L IRF3711S
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OCR Text |
...
10000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
100
TJ = 150 C
ID, Drain-to-Source Current (A)
1000
10
100
100sec 1msec
TJ = 25 C
1
10 Tc = 25C Tj = 150C Single Pulse 1 1 ... |
Description |
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?? Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?
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File Size |
243.87K /
11 Page |
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Keysight Technologies
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Part No. |
CX1102A CX1103A CX1151A
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OCR Text |
...easure - ments so diffcult? 1. limited dynamic range for example, most of the battery-powered devices have low power status such as sleep state or standby state that consume very little supply current such as less than 1 a, while the act... |
Description |
Device Current Waveform Analyzer Device Current Waveform Analyzer
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File Size |
4,381.70K /
32 Page |
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IRF[International Rectifier] International Rectifier, Corp.
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Part No. |
IRF3808L IRF3808S RF3808S
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OCR Text |
... Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). R Starting TJ = 25C, L = 0.130mH RG = 25, IAS = 82A. (See Figure 12). S ISD 82A, di/dt 310A/s, VDD V(BR)DSS, TJ 175C T Pulse width 400s; duty cycle 2... |
Description |
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A) Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?
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File Size |
159.77K /
11 Page |
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Price and Availability
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