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tradeoff Datasheet PDF File

For tradeoff Found Datasheets File :: 367 Search Time::1.219ms
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				Microsemi Corporation
Part No.	APT68GA60B APT68GA60S
OCR Text	...s. A reduced Eoff D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive....
Description	High Speed PT IGBT
File Size	209.33K / 6 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT68GA60LD40
OCR Text	...ocesses. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive....
Description	High Speed PT IGBT
File Size	240.00K / 9 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT28GA60BD15 APT28GA60SD15
OCR Text	...ocesses. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short G C E delay times and simple gat...
Description	High Speed PT IGBT
File Size	244.18K / 9 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT28GA60K
OCR Text	...ocesses. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive....
Description	High Speed PT IGBT
File Size	206.30K / 6 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT64GA90B APT64GA90S
OCR Text	...s. A reduced Eoff D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive....
Description	High Speed PT IGBT
File Size	196.62K / 6 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT64GA90LD30
OCR Text	...ocesses. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive....
Description	High Speed PT IGBT
File Size	226.62K / 9 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT44GA60B APT44GA60S
OCR Text	...s. A reduced Eoff D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive....
Description	High Speed PT IGBT
File Size	213.52K / 6 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT54GA60BD30 APT54GA60SD30
OCR Text	... A D3PAK reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive....
Description	High Speed PT IGBT
File Size	238.13K / 9 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT54GA60B APT54GA60S
OCR Text	...s. A reduced Eoff D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive....
Description	High Speed PT IGBT
File Size	211.26K / 6 Page	View it Online	Download Datasheet

For tradeoff Found Datasheets File :: 367 Search Time::1.219ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |