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Matsshita / Panasonic
|
| Part No. |
2SD2549
|
| OCR Text |
...ctory linearity * Low collector to emitter saturation voltage VCE(sat) * Full-pack package which can be installed to the heat sink with one ...220D Package
Junction temperature Storage temperature
I Electrical Characteristics TC = 25C
P... |
| Description |
Power Transistors
|
| File Size |
58.43K /
3 Page |
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it Online |
Download Datasheet
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Matsshita / Panasonic
|
| Part No. |
2SA2004
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| OCR Text |
...s TC = 25C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector curren...220D Package
Junction temperature Storage temperature
I Electrical Characteristics TC = 25C 3... |
| Description |
Power Transistors
|
| File Size |
42.53K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
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Matsshita / Panasonic
|
| Part No. |
2SC4953
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| OCR Text |
...peed switching * High collector to base voltage VCBO * Wide area of safe operation (ASO) * Satisfactory linearity of forward current transfe...220D Package
Junction temperature Storage temperature
I Electrical Characteristics TC = 25C
P... |
| Description |
Power Transistors
|
| File Size |
59.16K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
Panasonic
|
| Part No. |
2SK3636
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| OCR Text |
... storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit drain-source surrender voltage v dss i d = 1 ma...220d-a1 package note) * :l = 5 mh, i l = 3 a, 1 pulse internal connection g s d marking symbol:... |
| Description |
Power Device - Power MOS FETs
|
| File Size |
55.13K /
2 Page |
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it Online |
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| |
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Panasonic Industrial Solutions
Matsshita / Panasonic
|
| Part No. |
2SD2374A 2SD2374 2SD2374/2SD2374A 2SD2374AP
|
| OCR Text |
...wer amplification Complementary to 2SB1548 and 2SB1548A
* High forward current transfer ratio hFE which has satisfactory linearity * Low co...220D Package
Junction temperature Storage temperature
I Electrical Characteristics TC = 25C
P... |
| Description |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|晶体管|叩| 80V的五（巴西）总裁| 3A条一（c）|20VAR
2SD2374. 2SD2374A - NPN Transistor
Power Transistors
|
| File Size |
60.54K /
3 Page |
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it Online |
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| |
|
|
Panasonic
|
| Part No. |
MA3DF40
|
| OCR Text |
... 0. 2 2.6 0. 1 2.54 0.30 to-220d-a1 unit: mm
request for your special attention and precautions in using the technical information and semiconductors described in this book (1) if any of the products or technical informat... |
| Description |
Silicon Mesa type
|
| File Size |
260.69K /
3 Page |
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it Online |
Download Datasheet |
| |
|
|
Matsshita / Panasonic
|
| Part No. |
2SK3049
|
| OCR Text |
...ngs (TC = 25C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tc...220D Package
Avalanche energy capacity Allowable power dissipation Channel temperature Storage te... |
| Description |
Power F-MOS FETs
|
| File Size |
43.58K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
Matsshita / Panasonic
|
| Part No. |
2SK3048
|
| OCR Text |
...ngs (TC = 25C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tc...220D Package
Avalanche energy capacity Allowable power dissipation Channel temperature Storage te... |
| Description |
Power F-MOS FETs
|
| File Size |
53.72K /
4 Page |
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it Online |
Download Datasheet |
| |
|
|
Matsshita / Panasonic
|
| Part No. |
2SK3047
|
| OCR Text |
...ngs (TC = 25C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tc...220D Package
Avalanche energy capacity Allowable power dissipation Channel temperature Storage te... |
| Description |
Power F-MOS FETs
|
| File Size |
52.56K /
4 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
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