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Motorola
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| Part No. |
MRF5811LT1
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| OCR Text |
... = 10 Vdc
DUT RF INPUT *BIAS tee **SLUG TUNER
RF OUTPUT **SLUG TUNER *BIAS tee
***HP11608A TRANSISTOR FIXTURE
Figure 3. MRF5811L Functional Circuit Schematic
8 f T, GAIN-BANDWIDTH PRODUCT (GHz)
24 22 20 GU(max)
6 G U(ma... |
| Description |
NPN Silicon High Frequency Transistor
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| File Size |
115.15K /
8 Page |
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Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
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| Part No. |
MGA-725M4 MGA725M4 MGA-725M4-BLK MGA-725M4-TR1 MGA-725M4-TR2 DEMO-MGA-725M4
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| OCR Text |
... nH 100 pF Vds
RF Input Bias tee
ICM Fixture
Vd
Ax
27 nH
27 nH 2.7 nH
RF Output 47 pF
Vgs
Bias tee
Figure 1. MGA-725M4 Production Test Circuit.
MGA-725M4 Typical Performance Frequency = 2.0 GHz, Tc = 25C, Zo... |
| Description |
MGA-725M4 · 3V LNA with Bypass Switch, 2 to 14dBm Adjustable IIP3, MiniPak Package
DEMO-MGA-725M4 · Demonstration circuit board for MGA-725M4 (2 GHz)
Low Noise Amplifier with Bypass Switch In Miniature Leadless Package
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| File Size |
178.99K /
20 Page |
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it Online |
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Temex Components
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| Part No. |
BB4003 BB4108 BB4107 BB4109 BB4111 BB4110
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| OCR Text |
...ic parts: ? hybrid folded magic tee ? twin parallel ferrite phase shift sections ? 3 db coupler resonance isolator - waveguide devices by magnetically biasing a ferrite inside a waveguide, the non-reciprocal effect is obtained: with low los... |
| Description |
(BB4xxx) Ferrite Devices
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| File Size |
1,159.65K /
58 Page |
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it Online |
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Mini-Circuits
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| Part No. |
PBTC-3GW
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| OCR Text |
...deband 0.1 to 3000 mhz bias-tee plug-in maximum ratings pin connections rf 9 rf&dc 12 dc 3 ground all other pins case ground 1,2,4,5,7,8,11,13,14,15,16 bias-tee electrical speci?cations rev. b m 113397 pbtc-3gw+ dj/rs/ cp/am 0 8043... |
| Description |
Plug-In Bias-tee
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| File Size |
180.54K /
2 Page |
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it Online |
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Amphenol, Corp.
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| Part No. |
AS179-92LF AS197-306
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| OCR Text |
...age of 1.5 v). figure 5 shows a tee vva that uses two series fets and one shunt fet. source 5 k ? gate drain -5 v n si figure 1a. mesfet control device in high impedance state (?off? state) source 5 k ? gate drain 0 v n si figure 1b. mesfe... |
| Description |
APN2015:GaAs FETs as Control Devices|DC-6 GHz Plastic Packaged and Chip|SPST
AS197-306:PHEMT GaAs IC High Power SP2T and SP3T S|DC-6 GHz Plastic Packaged and Chip|SPST AS197 - 306：PHEMT的砷化镓集成电路高功率SP2T和SP3T秒|的DC - 6GHz的塑料包装和芯片|聚苯乙烯
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| File Size |
420.73K /
2 Page |
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it Online |
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