|
|
 |
IXYS[IXYS Corporation]
|
Part No. |
IXDH30N120D1 IXDT30N120D1 IXDH30N120 IXDT30N120
|
OCR Text |
...= 25C to 150C TJ = 25C to 150C; rge = 20 kW Continuous Transient TC = 25C TC = 90C TC = 90C, tp = 1 ms VGE = 15 V, TJ = 125C, RG = 47 W Clamped inductive load, L = 30 H VGE = 15 V, VCE = VCES, TJ = 125C RG = 47 W, non repetitive TC = 25C IG... |
Description |
IGBT Discretes: NPT IGBT High Voltage IGBT with optional Diode
|
File Size |
84.62K /
4 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
Part No. |
BSM200GB120DL 200B12L BSM200GB120 C67076-A2300-A70
|
OCR Text |
...200V 340A
VCE VCGR VGE IC
rge = 20 k
Gate-emitter voltage DC collector current
20 A 340 200
TC = 25 C TC = 80 C
Pulsed collector current, tp = 1 ms
ICpuls
680 400
TC = 25 C TC = 80 C
Power dissipation per IGBT
Ptot... |
Description |
From old datasheet system Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT08; Number of Contacts:19; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Right Angle Plug IGBT Power Module (Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes) IGBT功率模块(低损耗IGBT的低电感halfbridge包括快速续流二极管
|
File Size |
128.31K /
9 Page |
View
it Online |
Download Datasheet
|
|
|
 |
SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
Part No. |
BSM200GB120DN2 200B12N2 C67070-A2300-A70
|
OCR Text |
...
Unit V
VCE VCGR VGE IC
rge = 20 k
Gate-emitter voltage DC collector current
20 A 290 200
TC = 25 C TC = 80 C
Pulsed collector current, tp = 1 ms
ICpuls
580 400
TC = 25 C TC = 80 C
Power dissipation per IGBT
Ptot... |
Description |
From old datasheet system IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
File Size |
130.19K /
9 Page |
View
it Online |
Download Datasheet
|
|
|
 |

IXYS, Corp. IXYS Corporation ETC[ETC]
|
Part No. |
MDI100-12A3 MII100-12A3
|
OCR Text |
...= 25C to 150C TJ = 25C to 150C; rge = 20 kW Continuous Transient TC = 25C TC = 80C TC = 80C, tp = 1 ms VGE = 15 V, VCE = VCES, TJ = 125C RG = 15 W, non repetitive VGE = 15 V, TJ = 125C, RG = 15 W Clamped inductive load, L = 100 mH TC = 25C
... |
Description |
IGBT Modules 135 A, 1200 V, N-CHANNEL IGBT
|
File Size |
116.41K /
4 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|