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  rge Datasheet PDF File

For rge Found Datasheets File :: 2041    Search Time::1.281ms    
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    MGP20N40CL

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MGP20N40CL
OCR Text ...OLTS (CLAMPED) (R) C G G rge C E E CASE 221A-06, Style 9 TO-220AB MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Gate Voltage Gate-Emitter Voltage Collector Current -- Continuou...
Description CAP 0.1UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
SMARTDISCRETES Internally Clamped / N-Channel IGBT
SMARTDISCRETES Internally Clamped, N-Channel IGBT

File Size 129.38K  /  6 Page

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    IXYS[IXYS Corporation]
Part No. IXDH30N120D1 IXDT30N120D1 IXDH30N120 IXDT30N120
OCR Text ...= 25C to 150C TJ = 25C to 150C; rge = 20 kW Continuous Transient TC = 25C TC = 90C TC = 90C, tp = 1 ms VGE = 15 V, TJ = 125C, RG = 47 W Clamped inductive load, L = 30 H VGE = 15 V, VCE = VCES, TJ = 125C RG = 47 W, non repetitive TC = 25C IG...
Description IGBT Discretes: NPT IGBT
High Voltage IGBT with optional Diode

File Size 84.62K  /  4 Page

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    RX3140

Electronic Theatre Controls, Inc.
ETC
N.A.
List of Unclassifed Manufacturers
Part No. RX3140
OCR Text ...M 15 FSK OUT 14 CHA rge 13 BS 12 LPF OUT 11 LPF IN 1.0 V REGULATOR LOW 1-BIT BATTERY COMPARATOR ALARM CHArge/ DISCHArge CIRCUIT MIXER QUAD DETECTOR OSCILLATOR IFAMP OSC IN OSC OUT MIX OUT FSK ...
Description RX3140 Low Power IF Receiver IC

File Size 196.70K  /  8 Page

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    Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
Part No. BSM200GB120DL 200B12L BSM200GB120 C67076-A2300-A70
OCR Text ...200V 340A VCE VCGR VGE IC rge = 20 k Gate-emitter voltage DC collector current 20 A 340 200 TC = 25 C TC = 80 C Pulsed collector current, tp = 1 ms ICpuls 680 400 TC = 25 C TC = 80 C Power dissipation per IGBT Ptot...
Description From old datasheet system
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT08; Number of Contacts:19; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Right Angle Plug
IGBT Power Module (Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes) IGBT功率模块(低损耗IGBT的低电感halfbridge包括快速续流二极管

File Size 128.31K  /  9 Page

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    SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BSM200GB120DN2 200B12N2 C67070-A2300-A70
OCR Text ... Unit V VCE VCGR VGE IC rge = 20 k Gate-emitter voltage DC collector current 20 A 290 200 TC = 25 C TC = 80 C Pulsed collector current, tp = 1 ms ICpuls 580 400 TC = 25 C TC = 80 C Power dissipation per IGBT Ptot...
Description From old datasheet system
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

File Size 130.19K  /  9 Page

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    BSM300GA120DN2E3166 300A12E2 C67070-A2007-A70

SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
Part No. BSM300GA120DN2E3166 300A12E2 C67070-A2007-A70
OCR Text ...200V 430A VCE VCGR VGE IC rge = 20 k Gate-emitter voltage DC collector current 20 A 430 300 TC = 25 C TC = 80 C Pulsed collector current, tp = 1 ms ICpuls 860 600 TC = 25 C TC = 80 C Power dissipation per IGBT Ptot...
Description IGBT Power Module (Single switch Including fast free-wheeling diodes Enlarged diode area)
From old datasheet system
PT 21C 21#16 SKT RECP

File Size 126.79K  /  9 Page

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    BSM300GA170DN2E3166 300A17E2

Siemens Semiconductor Group
Infineon
Part No. BSM300GA170DN2E3166 300A17E2
OCR Text ...700V 440A VCE VCGR VGE IC rge = 20 k Gate-emitter voltage DC collector current 20 A 440 300 TC = 25 C TC = 80 C Pulsed collector current, tp = 1 ms ICpuls 880 600 TC = 25 C TC = 80 C Power dissipation per IGBT Ptot...
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
From old datasheet system

File Size 124.78K  /  9 Page

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    MDI100-12A3 MII100-12A3

IXYS, Corp.
IXYS Corporation
ETC[ETC]
Part No. MDI100-12A3 MII100-12A3
OCR Text ...= 25C to 150C TJ = 25C to 150C; rge = 20 kW Continuous Transient TC = 25C TC = 80C TC = 80C, tp = 1 ms VGE = 15 V, VCE = VCES, TJ = 125C RG = 15 W, non repetitive VGE = 15 V, TJ = 125C, RG = 15 W Clamped inductive load, L = 100 mH TC = 25C ...
Description IGBT Modules 135 A, 1200 V, N-CHANNEL IGBT

File Size 116.41K  /  4 Page

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    MDI145-12A3

IXYS Corporation
Part No. MDI145-12A3
OCR Text ...= 25C to 150C TJ = 25C to 150C; rge = 20 kW Continuous Transient TC = 25C TC = 80C TC = 80C, tp = 1 ms VGE = 15 V, VCE = VCES, TJ = 125C RG = 6.8 W, non repetitive VGE = 15 V, TJ = 125C, RG = 6.8 W Clamped inductive load, L = 100 mH TC = 25...
Description IGBT Modules - Short Circuit SOA Capability Square RBSOA

File Size 106.98K  /  4 Page

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