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意法半导
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STD3PS25-1 STD3PS25
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| OCR Text |
...
DYNAMIC
Symbol Ciss Coss Crss RG Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-Input Resistance f = 1 M...213 0.024 0.024 0.244 0.260 0.181 0.398
DIM.
P032P_B
7/10
STD3PS25 - STD3PS25-1
TO-25... |
| Description |
P-CHANNEL 250V - 2.1 OHM - 3A DPAK/IPAK MESH OVERLAY MOSFET
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| File Size |
444.07K /
10 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SSI2N80A SSWI2N80A SSW_I2N80A SSW2N80A
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| OCR Text |
...=1MHz See Fig 5 VDD=400V,ID=2A, RG=16 See Fig 13
45 OO
VDS=640V,VGS=10V, ID=2A See Fig 6 & Fig 12
45 OO
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Sourc... |
| Description |
Advanced Power MOSFET
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| File Size |
260.16K /
7 Page |
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ST Microelectronics
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| Part No. |
GB3NB60KD GD3NB60K GP3NB60K GP3NB60KD GP3NB60KDFP STGP3NB60KDFP
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| OCR Text |
... VBR(CES), VGE=15V, Tj = 125C , RG = 10 VCC = 480 V, IC = 3 A RG = 10, VGE = 15 V VCC= 480 V, IC = 3 A RG=10 VGE = 15 V,Tj = 125C Vcc = 480...213 0.024 0.024 0.244 0.260 0.181 0.398
DIM.
P032P_B
10/14
STGP3NB60K/STGD3NB60K/STGP3N... |
| Description |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT
N-CHANNEL 600V 3A TO-220/TO-220FP/DPAK/D2PAK POWERMESH IGBT
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| File Size |
714.28K /
14 Page |
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it Online |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STGD3NB60HDT4 STGD3NB60HD GD3NB60HD STGD3NB60HT4
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| OCR Text |
... 15V Vclamp = 480 V , Tj = 125C RG = 10 Test Conditions VCC = 480 V, IC = 3 A RG = 10 , VGE = 15 V VCC= 480 V, IC = 3 A RG=10 VGE = 15 V,Tj...213 0.024 0.024 0.244 0.260 0.181 0.398
DIM.
P032P_B
8/10
STGD3NB60HD
DPAK FOOTPRINT
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| Description |
N-CHANNEL 3A 600V DPAK POWERMESH IGBT
N-CHANNEL 6A - 600V - DPAK PowerMESH TM IGBT
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| File Size |
501.64K /
10 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
NTLJS3113P_06 NTLJS3113P NTLJS3113PT1G
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| OCR Text |
....5 V, VDD = -10 V, ID = -3.0 A, RG = 3.0 W 6.9 17.5 60 56.5 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD RG VGS = -4.5 V, VDS = -16 V, ID = -3.0 A 1329 VGS = 0 V, f = 1.0 MHz, VDS = -16 V 213 120 13 1.5 2.2 2.9 14.4 W 15.7 nC pF VGS = VDS, ID =... |
| Description |
Power MOSFET −20 V, −7.7 A, uCool TM Single 2x2 mm, WDFN Package
From old datasheet system
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| File Size |
75.94K /
6 Page |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MGY40N60D
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| OCR Text |
...60 Vdc, VGE = 15 Vdc, TJ = 25C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT Thermal Resistance -- Junction to Case - Diode Therm...213 122 91 4.9 -- -- -- -- -- -- -- -- C C ns ns Symbol Min Typ Max Unit
TYPICAL ELECTRICAL CHARA... |
| Description |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
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| File Size |
246.87K /
6 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFRU3707PBF IRFR3707PBF
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| OCR Text |
...VDD = 15V --- ID = 24.8A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 15V --- pF = 1.0MHz
Avalanche Characteristics
Symbol
E...213 61
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Curre... |
| Description |
HEXFET? Power MOSFET
HEXFET Power MOSFET
HEXFET㈢ Power MOSFET
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| File Size |
218.15K /
9 Page |
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it Online |
Download Datasheet |
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Price and Availability
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