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  qgd Datasheet PDF File

For qgd Found Datasheets File :: 21607    Search Time::1.203ms    
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    AP4501SD

Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
Part No. AP4501SD
OCR Text ... VGS(th) gfs IDSS IGSS Qg Qgs qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150 C) o VDS=VGS, ID=250uA VDS=10V, ID=7...
Description 30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 112.60K  /  11 Page

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    AP4513GH

Advanced Power Electronics Corp.
Part No. AP4513GH
OCR Text ... VGS(th) gfs IDSS IGSS Qg Qgs qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150oC) o VDS=VGS, ID=250uA VDS=10V, I...
Description 30V N-Channel PowerTrench MOSFET
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 94.75K  /  7 Page

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    AP4513GM

Advanced Power Electronics Corp.
Part No. AP4513GM
OCR Text ... VGS(th) gfs IDSS IGSS Qg Qgs qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=250uA VDS=10V, ID=5A...
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 80.79K  /  7 Page

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    AP4515GM

Advanced Power Electronics Corp.
Part No. AP4515GM
OCR Text ... VGS(th) gfs IDSS IGSS Qg Qgs qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=250uA VDS=10V, ID...
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 82.27K  /  7 Page

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    NTLGD3502N NTLGD3502NT1G NTLGD3502NT2G

ON Semiconductor
Part No. NTLGD3502N NTLGD3502NT1G NTLGD3502NT2G
OCR Text ...ance CISS COSS CRSS QG(TOT) QGS qgd RG VGS = 4.5 V, VDS = 10 V; ID = 4.3 A (Note 3) VGS = 0 V, f = 1 MHz, VDS = 10 V 250 138 52 2.9 1.0 1.1 1.5 W 480 200 90 4.0 nC pF VGS(TH) VGS(TH)/TJ RDS(on) gFS VGS = 4.5 V, ID = 4.3 A VDS = 10 V, ID = 4...
Description Power MOSFET 20 V, 5.8 A/4.6 A Dual N−Channel, DFN6 3x3 mm Package

File Size 84.12K  /  8 Page

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    IRF[International Rectifier]
Part No. IRF6631
OCR Text ...hniques VDSS Qg tot VGS qgd 4.4nC RDS(on) Qgs2 1.1nC RDS(on) Qoss 7.3nC 30V max 20V max 6.0m@ 10V 8.3m@ 4.5V Qrr 10nC Vgs(th) 1.8V 12nC SQ Applicable DirectFET Outline and Substrate Outline (see p.7,8 for ...
Description DirectFET Power MOSFET

File Size 238.38K  /  9 Page

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    NTHD5904NT1 NTHD5904NT1G NTHD5904NT3 NTHD5904NT3G NTHD5904N_05 NTHD5904N NTHD5904N05

ONSEMI[ON Semiconductor]
Part No. NTHD5904NT1 NTHD5904NT1G NTHD5904NT3 NTHD5904NT3G NTHD5904N_05 NTHD5904N NTHD5904N05
OCR Text ...ss Coss Crss QG(TOT) QG(TH) QGS qgd QG(TOT) QG(TH) QGS qgd VGS = 4.5 V, VDS = 10 V, ID = 3.3 A VGS = 2.5 V, VDS = 16 V, ID = 3.3 A VGS = 0 V, f = 1.0 MHz, VDS = 16 V 465 65 30 4.0 0.4 0.8 2.0 6.0 0.5 0.8 1.7 nC nC pF gFS VDS = 10 V, ID = 3....
Description Power MOSFET 20 V, 4.5 A, Dual N−Channel, ChipFET

File Size 62.16K  /  6 Page

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    5M0365R

Fairchild Semiconductor
Part No. 5M0365R
OCR Text ...rss td(on) tr td(off) tf Qg Qgs qgd Condition VGS=0V, ID=50A VDS=Max. Rating, VGS=0V VDS=0.8Max. Rating, VGS=0V, TC=125C VGS=10V, ID=0.5A VDS=50V, ID=0.5A VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentiall...
Description Fairchild Power Switch(FPS)

File Size 947.27K  /  21 Page

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    ISL9N322AP3 ISL9N322AS3ST

FAIRCHILD[Fairchild Semiconductor]
Part No. ISL9N322AP3 ISL9N322AS3ST
OCR Text ...5V * Qg (Typ) = 9nC, VGS = 5V * qgd (Typ) = 3nC * CISS (Typ) = 970pF Applications * DC/DC converters DRAIN (FLANGE) SOURCE DRAIN GATE D GATE SOURCE DRAIN (FLANGE) G S TO-263AB Symbol VDSS VGS TO-220AB Ratings 30 20 3...
Description N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

File Size 138.51K  /  11 Page

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    ISL9N302AP3 N302AP

FAIRCHILD[Fairchild Semiconductor]
Part No. ISL9N302AP3 N302AP
OCR Text ... * Qg (Typ) = 110nC, VGS = 5V * qgd (Typ) = 31nC * CISS (Typ) = 11000pF Applications * DC/DC converters SOURCE DRAIN GATE D G DRAIN (FLANGE) S TO-220AB MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS VGS Par...
Description N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

File Size 121.65K  /  10 Page

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For qgd Found Datasheets File :: 21607    Search Time::1.203ms    
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