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EUDYNA[Eudyna Devices Inc]
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Part No. |
FLL600IQ-3
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OCR Text |
...nnel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25C Condition Rating 15 -5 125 -65 to +175 +175 Unit V V W C C
Fujitsu recommends the fo...2400 2500 2600 2700 2800 2900 3000 3100 3200 3300
S11 MAG
.978 .974 .972 .962 .961 .952 .944 .93... |
Description |
L-Band Medium & High Power GaAs FET
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File Size |
102.21K /
4 Page |
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EUDYNA[Eudyna Devices Inc]
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Part No. |
FLM1314-8F
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OCR Text |
...nnel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25C Condition Rating 15 -5 45.5 -65 to +175 175 Unit V V W C C
Fujitsu recommends the fo...2400 3000 28 -45 2.8 0.6 3.3 80
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
E... |
Description |
X, Ku-Band Internally Matched FET
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File Size |
297.61K /
4 Page |
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MACOM[Tyco Electronics]
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Part No. |
MA4EX585L-1225T
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OCR Text |
... Port
6
4 1db Compression Pt.
2
5950 3450
6000 3500
0 5600 5650 5700 5750 5800 5850 5900 5950
3400
RF & LO FREQUENCY (MHz)
FREQUENCY (MHz)
3 M/A-COM Inc. and its affiliates reserve the right to make changes to ... |
Description |
5600 MHz - 6000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 9 dB CONVERSION LOSS-MAX Silicon Double Balanced HMIC Mixer LO=3300 MHz, RF=5800 MHz
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File Size |
105.57K /
4 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGF0912A
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OCR Text |
...s
Symbol
VGSO VGDO ID IGR IGF PT Tch Tstg
Parameter
Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reve...2400 2600 2800 3000
S PARAMETERS
MAG 0.973 0.973 0.972 0.972 0.971 0.970 0.969 0.968 0.967 0.966... |
Description |
L & S BAND GaAs FET
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File Size |
24.00K /
3 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGF0915A_03 MGF0915A MGF0915A03
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OCR Text |
...s
Symbol
VGSO VGDO ID IGR IGF PT Tch Tstg
Parameter
Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reve...2400 -3 1000 36.5 50 14.5 5 Max. 3000 -5 8
Unit
mA V mS dBm % dB C/W
*1:Channel to case /
... |
Description |
L & S BAND GaAs FET
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File Size |
42.10K /
3 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGF0915A
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OCR Text |
...in breakdown voltage ID IGR IGF PT Tch Tstg
Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperat...2400 -3 1000 36.5 50 14.5 5 Max. 3000 -5 8
Unit
mA V mS dBm % dB C/W
*1:Channel to case /
... |
Description |
L & S BAND GaAs FET[ SMD non - matched ]
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File Size |
1,309.44K /
48 Page |
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NEC Corp. NEC[NEC]
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Part No. |
NE698M01-T1 NE698M01
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OCR Text |
...25C)
SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect...2400 2600 2800 3000 3500 4000 4500 5000 Note: 1. Gain Calculations:
MAG = |S21| |S12|
S11 MAG 0.... |
Description |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION
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File Size |
60.24K /
8 Page |
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Cornell Dubilier Electronics, Inc. Fujitsu, Ltd. Sumitomo Electric Industries, Ltd. NEC[NEC]
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Part No. |
NP100P04PLG-E2-AY NP100P04PLG NP100P04PLG-E1-AY
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OCR Text |
...IPATION vs. CASE TEMPERATURE
PT - Total Power Dissipation - W
200 160 120 80 40 0 0 25 50 75 100 125 150 175 200
Tch - Channel Temperature - C FORWARD BIAS SAFE OPERATING AREA
TC - Case Temperature - C
-1000
ID(pulse)
PW =1... |
Description |
100 A, 40 V, 0.0051 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN MOS FIELD EFFECT TRANSISTOR
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File Size |
180.39K /
7 Page |
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NEC[NEC] Cypress Semiconductor, Corp.
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Part No. |
NP34N055IHE NP34N055HHE NP34N055HHE-AZ
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OCR Text |
...)
VDSS VGSS ID(DC) ID(pulse) PT PT IAS EAS Tch Tstg
Total Power Dissipation (TA = 25 C) Total Power Dissipation (TC = 25 C) Single Ava...2400 380 220 47 38 70 29 45 MAX. 19 4.0 UNIT m V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
... |
Description |
Nch MOS FET for High-speed switching SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 34 A, 55 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 MP-3, 3 PIN
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File Size |
66.51K /
8 Page |
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it Online |
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