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ST Microelectronics
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| Part No. |
STW9NC70Z
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| OCR Text |
powermesh?iii mosfet n typical r ds (on) = 0.9 w n extremely high dv/dt capability gate- to-source zener diodes n 100% avalanche tested n v...a large variety of single-switch applications. applications n single-ended smps in monitors, comput... |
| Description |
N-channel MOSFET
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| File Size |
202.61K /
8 Page |
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意法半导
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| Part No. |
W15NB50
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| OCR Text |
powermesh ? mosfet n typical r ds(on) = 0.33 w n extremely high dv/dt capability n 30v gate to source voltage rating n 100% avalanche teste...a i d drain current (continuous) at t c =100 o c9.26.6a i dm ( ? ) drain current (pulsed) 58.4 58.4 ... |
| Description |
N-CHaNNEL 500V - 0.33ohm - 14.6a - T0-247/ISOWaTT218 powermesh MOSFET
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| File Size |
97.66K /
9 Page |
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ST Microelectronics
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| Part No. |
STD5NM50T4
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| OCR Text |
...ain pro- cess with the companys powermesh? horizontal layout. the resulting product has an outstanding low on-resistance, impressively high ...a 7.5 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 500 v v dgr drain-gate vol... |
| Description |
N-CHaNNEL 550V @Tjmax - 0.7 OHM - 7.5a DPaK/IPaK MDMESH POWER MOSFET
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| File Size |
421.21K /
10 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP8N65M5 STI8N65M5 STU8N65M5 STF8N65M5 STD8N65M5
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| OCR Text |
... stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on-resistance, which is u...a 7 a (1) 7 a 7 a 7 a 1. limited only by maximum temperature allowed 1 2 3 1 2 3 to-220fp dpak to-2... |
| Description |
Power MOSFETs
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| File Size |
1,010.37K /
15 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STD3NM50T4
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| OCR Text |
...in pro- cess with the company?s powermesh? horizontal layout. the resulting product has an outstanding low on-resistance, impressively high ...a i dm ( ) drain current (pulsed) 12 a p tot total dissipation at t c = 25c 46 w v esd(g-s) gate s... |
| Description |
N-CHaNNEL 550V @Tjmax - 2.5 OHM - 3a DPaK/IPaK ZENER-PROTECTED MDMESH POWER MOSFET
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| File Size |
270.97K /
10 Page |
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it Online |
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ST Microelectronics
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| Part No. |
W14NB50
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| OCR Text |
powermesh ? mosfet preliminary data n typical r ds(on) = 0.40 w n extremely high dv/dt capability n 100% avalanche tested n gate charge ...a new product now in development or undergoing evaluation. details are subject to change wit hout no... |
| Description |
Search --To STW14NB50
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| File Size |
72.41K /
5 Page |
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it Online |
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