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HP[Agilent(Hewlett-Packard)]
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| Part No. |
HEMT-3301 HEMT-1001
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| OCR Text |
...rum Matches Response of Silicon photodetectors
Description
The HEMT-3301 and HEMT-1001 are infrared emitters, using a mesa structure GaAs on GaAs infrared diode, IRED, optimized for maximum quantum efficiency at a peak wavelength of 940... |
| Description |
940 nm High Radiant Emitters
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| File Size |
184.72K /
4 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
LN152
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| OCR Text |
...nts in conbination with silicon photodetectors
o5.35 +0.2 -0.1 o4.2 +0.1 -0.2 3.00.3 12.7 min. 2.00.1 0.20.05
2-o0.450.05
0 1.
5 .1 +0 0.1 -
1. 0
0 .1
45 3
High-speed modulation
2
1
Absolute Maximum Ratings (T... |
| Description |
GaAs Infrared Light Emitting Diode
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| File Size |
35.81K /
2 Page |
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Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
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| Part No. |
LN172
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| OCR Text |
...ing spectrum suited for silicon photodetectors : P = 900 nm (typ.) Good optical power output linearity with respect to input current Long lifetime, high reliability
1. 0 0. 15
2.40.3 12.7 min. 1.20.1 0.250.1
o4.2 +0.2 -0.1
2-o0.450.... |
| Description |
GaAlAs Infrared Light Emitting Diode
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| File Size |
35.25K /
2 Page |
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it Online |
Download Datasheet |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
LN175
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| OCR Text |
...ght spectrum suited for silicon photodetectors : P = 900 nm (typ.) Good radiant power output linearity with respect to input current Wide directivity : = 120 deg. (typ.)
3.90.25
4.50.15 3.50.15
2.10.15 1.60.15 0.80.1
12.8 min.
... |
| Description |
GaAlAs Infrared Light Emitting Diode
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| File Size |
41.45K /
2 Page |
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it Online |
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Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
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| Part No. |
LN52
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| OCR Text |
...nts in conbination with silicon photodetectors
o5.35 +0.2 -0.1 o4.2 +0.1 -0.2 3.00.3 12.7 min. 2.00.1 0.20.05
2-o0.450.05
0 1.
5 .1 +0 0.1 -
1. 0 0.
1
45 3
2
1
Absolute Maximum Ratings (Ta = 25C)
2.540.25
Par... |
| Description |
GaAs Infrared Light Emitting Diode
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| File Size |
43.76K /
3 Page |
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it Online |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
LN66F
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| OCR Text |
...ght spectrum suited for silicon photodetectors Narrow directivity : = 15 deg. (typ.) Transparent epoxy resin package
13.51.0 11.51.0 3.60.3 1.0 7.650.2
o5.00.2 Not soldered 2-1.00.15 2-0.60.15 2.54 0.60.15 2 1 1: Cathode 2: Anode o6.00... |
| Description |
GaAs Infrared Light Emitting Diode
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| File Size |
40.74K /
3 Page |
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it Online |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
LN69
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| OCR Text |
...ght spectrum suited for silicon photodetectors : P = 940 nm (typ.) Good radiant power output linearity with respect to input current Long lifetime, high reliability o3 plastic package
0.50.1
Absolute Maximum Ratings (Ta = 25C)
Parame... |
| Description |
GaAs Infrared Light Emitting Diode
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| File Size |
39.46K /
2 Page |
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it Online |
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Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
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| Part No. |
LNA2606L
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| OCR Text |
...ght spectrum suited for silicon photodetectors * Ultra-miniature, thin side-view type package * Long lifetime, high reliability
1.950.25 3.00.3
0.8
1.1 R0.5
1.40.2 0.9 0.5
3.50.3 12 min.
2.4 1.1 Not soldered 2.15 max.
1.1... |
| Description |
HEADER, VERTICAL, 1ROW, 6WAY; Connector type:Wire-to-Board; Gender:Plug; Ways, No. of:6; Pitch, lead:2mm; Termination method:Solder; Material, contact:Brass; Plating, contact: Tin; Rows, No. of:1; Colour:White; Contacts, No. of:6; RoHS Compliant: Yes
GaAlAs on GaAs Infrared Light Emitting Diode
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| File Size |
20.60K /
1 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
LNA2801L
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| OCR Text |
...ght spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current o3 plastic package
0.50.1
Absolute Maximum Ratings (Ta = 25C)
Parameter Power dissipation Forward current (DC) Pulse for... |
| Description |
GaAlAs on GaAs Infrared Light Emitting Diode
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| File Size |
39.29K /
2 Page |
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it Online |
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Price and Availability
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