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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
M54122L M541
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| OCR Text |
...bsorption Output
OD SC NR OS VS
APPLICATION
High speed earth leakage circuit breaker
FUNCTION
The M54122L circuit for the amp...50
Timed current 1 vs. ambient temperature
Timed current 1 ITD1 (A)
4
-40
3
-30
... |
| Description |
EARTH LEAKAGE CURRENT DETECTOR
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| File Size |
195.92K /
6 Page |
 View
it Online |
Download Datasheet
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http://
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| Part No. |
GS880F36BT-7.5IV GS880F36BT-6.5IV GS880F36BT-6.5V GS880F36BT-5.5V
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| OCR Text |
...t. controls addresses, data i/os, chip enables ( e1 , e2, e3 ), address burst control inputs ( adsp , adsc , adv ), and write control ...50 nc gs880f18/32/36bt-xxxv rev: 1.00 6/2006 2/21 ? 2006, gsi technology specifications cited are s... |
| Description |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
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| File Size |
544.75K /
21 Page |
View
it Online |
Download Datasheet |
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GSI Technology, Inc.
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| Part No. |
GS880F36AT-8.5 GS880F18AT-6.5I GS880F32AT-5.5I GS880F18AT-6I GS880F36AT-7 GS880F32AT-8.5
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| OCR Text |
...t. controls addresses, data i/os, chip enables (e1 , e2, e3 ), address burst control inputs (adsp , adsc , adv ), and write control input...50 nc
gs880f18/32/36at-5 .5/6/6.5/7/7.5/8.5 specifications cited are subject to change without not... |
| Description |
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 8.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 7 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 6 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 5.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 6.5 ns, PQFP100
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| File Size |
409.73K /
23 Page |
View
it Online |
Download Datasheet |
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LINEAR TECHNOLOGY CORP
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| Part No. |
LTC6256CKCTRPBF LTC6256HTS8TRMPBF LTC6255HS6TRMPBF
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| OCR Text |
... conditions min typ max units v os input offset voltage v cm = v C + 0.3v (pnp region) l C350 C700 100 350 700 v v v cm = v + C 0....50 75 na na v cm = v + C 0.3v l C50 C75 5 50 75 na na i os input offset current v cm = v C... |
| Description |
DUAL OP-AMP, 700 uV OFFSET-MAX, 6.5 MHz BAND WIDTH, PDSO8
OP-AMP, 700 uV OFFSET-MAX, 6.5 MHz BAND WIDTH, PDSO6
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| File Size |
452.96K /
24 Page |
View
it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
M54123L
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| OCR Text |
...bsorption Output
OD SC NR OS VS
APPLICATION
High speed earth leakage circuit breaker
FUNCTION
The M54123L circuit for the amp...50
Timing current vs. ambient temperature
Timed current 1 ITD1 (A)
2
-40
1.5
-30
... |
| Description |
EARTH LEAKAGE CURRENT DETECTOR
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| File Size |
194.81K /
6 Page |
View
it Online |
Download Datasheet |
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UTC[Unisonic Technologies]
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| Part No. |
M54123L
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| OCR Text |
...
+ AMP -
latch circuit
7 Os output
GND 3
1 VR Reference voltage
2 IN Input
4 OD Differential amplifier output
5 Sc Lat...50 -40 -30 -20
Timing current vs. ambient temperature
2.0 1.5 1.0 Ta=75 0.5 0 5 6 7 8 9 10 25 ... |
| Description |
EARTH LEAKAGE CURRENT DETECTOR
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| File Size |
225.61K /
9 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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