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Freescale (Motorola)
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Part No. |
MRF5S19100L MRF5S19100LR3 MRF5S19100LSR3
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OCR Text |
n?channel enhancement?mode lateral mosfets designed for pcn and pcs base station applications with frequencies up to 1.9 to 2.0 ghz. suitable for tdma, cdma and multicarrier amplifier applications. ? typical 2?carrier n?cdma performance fo... |
Description |
MRF5S19100LR3, MRF5S19100LSR3 1990 MHz, 22 W Avg., 2 x n-cdma, 28 V Lateral N-Channel RF Power MOSFETs 1990 MHz, 22 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
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File Size |
799.79K /
12 Page |
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Freescale (Motorola)
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Part No. |
MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3
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OCR Text |
n - channel enhancement - mode lateral mosfets designed for pcn and pcs base station applications with frequencies up to 1.9 to 2.0 ghz. suitable for tdma, cdma and multicarrier amplifier applications. ? typical 2 - carrier n - cdma perfor... |
Description |
MRF5S19090L, MRF5S19090LR3, MRF5S19090LSR3 1990 MHz, 18 W Avg., 2 x n-cdma, 28 V Lateral N-Channel RF Power MOSFETs 1990 MHz, 18 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
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File Size |
586.50K /
12 Page |
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it Online |
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LSI CORP
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Part No. |
AGR19030EF
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OCR Text |
... the agr19030ef is a 30 w, 28 v n-channel later- ally diffused metal oxide semiconductor (ldmos) rf power field effect transistor (fet) sui...cdma features typical 2 carrier n-cdma performance: v dd = 28 v, i dq = 350 ma, f1 = 1958.75 mhz,... |
Description |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
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File Size |
179.87K /
11 Page |
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it Online |
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http://
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Part No. |
KSN-1807A-519
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OCR Text |
...e d esign engineers se a r ch e n g ine finds the model you need, instantly ? for detailed performance specs & shopping online see tm ksn-1...cdma application. the ksn-1807a-519+ is packaged in a metal case (size of 0.80" x 0.58" x 0.15" ) ... |
Description |
Frequency Synthesizer
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File Size |
749.79K /
11 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
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Part No. |
MWIC930R1 MWIC930 MWIC930GR1
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OCR Text |
...lications: GSM, GSM EDGE, TDMA, N - CDMA and W - CDMA. Final Application * Typical Performance @ P1dB: VDD = 26 Volts, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 30 Watts P1dB, Full Frequency Band (921 - 960 MHz) Power Gain -- 30 dB Power Added Ef... |
Description |
RF LDMOS Wideband Integrated Power Amplifiers
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File Size |
370.24K /
16 Page |
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it Online |
Download Datasheet |
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Price and Availability
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