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Toshiba, Corp.
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| Part No. |
GT60N321
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| Description |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High power Switching Applications The 4th generation
High power Switching Applications The 4th generation 高功率转换应用的第四
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| File Size |
172.02K /
6 Page |
 View
it Online |
Download Datasheet
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Microsemi Corporation
ADPOW[Advanced power Technology]
Microsemi, Corp.
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| Part No. |
APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT10026L2LLG
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| Description |
power MOS 7 is a new generation of low loss, high voltage, N-Channel
power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, power, MOSFET TO-264MAX, 3 PIN
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| File Size |
100.91K /
5 Page |
View
it Online |
Download Datasheet |
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Advanced power Technology Ltd.
ADPOW[Advanced power Technology]
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| Part No. |
APT12GT60KR
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| Description |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 25A
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| File Size |
25.27K /
2 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced power Technology]
Advanced power Technology Ltd.
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| Part No. |
APT8GT60KR
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| Description |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 17A
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
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| File Size |
87.14K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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