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Amphenol, Corp.
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Part No. |
AS179-92LF AS197-306
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OCR Text |
...gate drain -5 v n si figure 1a. mesfet control device in high impedance state (?off? state) source 5 k ? gate drain 0 v n si figure 1b. mesfet control device in low impedance state (?on? state)
gaas fets as control devices apn2015 2 sky... |
Description |
APN2015:GaAs FETs as Control Devices|DC-6 GHz Plastic Packaged and Chip|SPST AS197-306:PHEMT GaAs IC High Power SP2T and SP3T S|DC-6 GHz Plastic Packaged and Chip|SPST AS197 - 306:PHEMT的砷化镓集成电路高功率SP2T和SP3T秒|的DC - 6GHz的塑料包装和芯片|聚苯乙烯
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File Size |
420.73K /
2 Page |
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it Online |
Download Datasheet
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CEL
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Part No. |
NE67483B
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OCR Text |
... noise amplifier n-channel gaas mesfet description nec's ne674 is a l to ku band low noise gaas mesfet. this device features a low noise figure with high associated gain, employing a recessed 0.3 micron gate and triple epitaxial technology... |
Description |
(NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
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File Size |
134.57K /
7 Page |
View
it Online |
Download Datasheet
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Price and Availability
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