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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQPF19N10
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| OCR Text |
...te Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25C unless otherwise noted
Parameter Drain-Source Vo...19A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% ... |
| Description |
100V N-Channel MOSFET
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| File Size |
581.31K /
8 Page |
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FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
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| Part No. |
FQPF19N10L
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| OCR Text |
...te Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25C unless otherwise noted
Parameter Drain-Source Vo...19A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% ... |
| Description |
100V LOGIC N-Channel MOSFET 13.6 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
613.83K /
8 Page |
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it Online |
Download Datasheet |
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Infineon Technologies AG
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| Part No. |
BTS244Z09 BTS244ZE-3043 BTS244ZE-3062A
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| OCR Text |
...5 V, TC = 85 C 0.5 V, TC = 85 C ID ID puls EAS Ptot Tj Tjpeak Tstg Symbol VDS V Value 55 55 20 A 19 26 35 188 1.65 170 -40 ...+175 200 -55 ....19A; VGS = 4.5V
40
8 On-state resistance
RON = f(Tj ); ID=19A; VGS = 10V
30
m
max.
m
R... |
| Description |
Speed TEMPFET
35 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET GREEN, PLASTIC, TO-220, 5 PIN
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| File Size |
395.43K /
14 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT12057JLL APT12040JLL
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| OCR Text |
...g
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
S G D
S
SO
ISOTOP (R)
...19A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
56.66K /
2 Page |
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it Online |
Download Datasheet |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
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| Part No. |
APT10050JVFR_04 APT10050JVFR APT10050JVFR04
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| OCR Text |
...g
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
* 100% Avalanche Tested * Popula...19A j G L 5 I - -I [Cont.], di/ = 100A/s, V S D DD - VDSS, Tj - 150C, RG = 2.0y, dt
VR = 200V
AP... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
64.42K /
4 Page |
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it Online |
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Intersil, Corp.
Intersil Corporation
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| Part No. |
HUF76419D3S HUF76419D3 FN4668
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| OCR Text |
.... . . . . . . . . . . . . . . . ID Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....19A, VGS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resist... |
| Description |
20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 20 A, 60 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
From old datasheet system
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| File Size |
330.27K /
9 Page |
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it Online |
Download Datasheet |
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Fairchild Semiconductor
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| Part No. |
HUF76419D3 HUF76419D3S HUF76419D3ST
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| OCR Text |
.... . . . . . . . . . . . . . . . ID Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...19A, VGS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resist... |
| Description |
20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET? Power MOSFET
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| File Size |
194.67K /
10 Page |
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it Online |
Download Datasheet |
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