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For ibis Found Datasheets File :: 325    Search Time::1.344ms    
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    FREESCALE[Freescale Semiconductor, Inc]
Part No. DSP56371
OCR Text ...simulation models (for example, ibis files), contact sales or go to www.freescale.com. 2 2.1 DSP56371 Overview Introduction This manual describes the DSP56371 24-bit digital signal processor (DSP), its memory, operating modes and...
Description high density CMOS device

File Size 931.89K  /  68 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. DSP56374UM_D DSP56300FM_AD DSP56374 DSP56374PB_D
OCR Text ...simulation models (for example, ibis files), contact sales or go to www.freescale.com. Table of Contents 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Featu...
Description a high-density CMOS device

File Size 1,112.31K  /  64 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. DSPA56371
OCR Text ...ower Consumption Benchmark63 22 ibis Model ................................ 66 The DSP56371 is a high density CMOS device with 5.0-volt compatible inputs and outputs. Finalized specifications may be published after further characteriz...
Description The DSP56371 is a high density CMOS device with 5.0-volt compatible inputs and outputs.

File Size 1,300.90K  /  124 Page

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    ICST[Integrated Circuit Systems]
Part No. ICS95V842
OCR Text ...V(CLKC) ICS95V842 GND Figure 1. ibis Model Output Load VDD/2 ICS95V842 Z = 60 C = 14 pF -V DD/2 R = 10 Z = 50 SCOPE R = 50 V(TT) Z = 60 R = 10 Z = 50 C = 14 pF -VDD/2 -VDD/2 NOTE: V(TT) = GND Figure 2. Output Load Test Circuit R = ...
Description DDR Phase Lock Loop Clock Driver (60MHz - 220MHz)

File Size 71.33K  /  9 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4H1G0738C-UC_LB0 K4H1G0638C K4H1G0638C-UC_LA2 K4H1G0638C-UC_LB0 K4H1G0738C-UC_LA2 K4H1G0638C-UC/LA2 K4H1G0638C-UC/LB0 K4H1G0738C-UC/LA2 K4H1G0738C-UC/LB0
OCR Text ...........................20 23.0 ibis : I/V Characteristics for Input and Output Buffers ........................................................21 Rev. 1.1 June. 2005 DDR SDRAM stacked 1Gb C-die (x4/x8) Revision History Revision 0.0...
Description Stacked 1Gb C-die DDR SDRAM Specification

File Size 336.97K  /  23 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4H510838B-VC_LCC K4H510838B-N K4H510838B-NC_LA2 K4H510838B-NC_LB0 K4H510838B-NC_LB3 K4H510838B-NC_LCC K4H510838B-VC_LA2 K4H510838B-VC_LB0 K4H510838B-VC_LB3
OCR Text ...........................20 23.0 ibis : I/V Characteristics for Input and Output Buffers ........................................................21 Rev. 1.3 June. 2005 DDR SDRAM 512Mb B-die (x8) Revision History Revision 0.0 0.1 1.0 ...
Description 512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil)

File Size 341.67K  /  24 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S280432M-TC_L80 K4S280432M K4S280432M-TC_L10 K4S280432M-TC_L1H K4S280432M-TC_L1L K4S280432M-TC/L1L K4S280432M-TC/L1H K4S280432M-TC/L80 K4S280432M-TC/L10
OCR Text ...v. 0.0 Aug. 1999 K4S280432M ibis SPECIFICATION IOH Characteristics (Pull-up) Voltage (V) 3.45 3.3 3.0 2.6 2.4 2.0 1.8 1.65 1.5 1.4 1.0 0.0 100MHz Min I (mA) 100MHz Max I (mA) -2.4 -27.3 -74.1 -129.2 -153.3 -197.0 -226.2 -248.0 -269.7 ...
Description MC 7P MR 16/1 PVC GOLD RoHS Compliant: Yes
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL

File Size 124.58K  /  10 Page

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    K4S280832B-TL80 K4S280832B K4S280832B-TC10 K4S280832B-TC1H K4S280832B-TC1L K4S280832B-TC75 K4S280832B-TCL10 K4S280832B-T

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S280832B-TL80 K4S280832B K4S280832B-TC10 K4S280832B-TC1H K4S280832B-TC1L K4S280832B-TC75 K4S280832B-TCL10 K4S280832B-TCL1H K4S280832B-TCL1L K4S280832B-TCL75 K4S280832B-TCL80 K4S280832B-TL10 K4S280832B-TL1H K4S280832B-TL1L K4S280832B-TL75 K4S280832B-TC80
OCR Text ...v. 0.0 Aug. 1999 K4S280832B ibis SPECIFICATION IOH Characteristics (Pull-up) Voltage (V) 3.45 3.3 3.0 2.6 2.4 2.0 1.8 1.65 1.5 1.4 1.0 0.0 100MHz Min I (mA) 100MHz Max I (mA) -2.4 -27.3 -74.1 -129.2 -153.3 -197.0 -226.2 -248.0 -269.7 ...
Description 4M x 8Bit x 4 Banks Sychronous DRAM 4米8位4银行Sychronous内存

File Size 120.23K  /  10 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S281632M-TL80 K4S281632M K4S281632M-L10 K4S281632M-L1H K4S281632M-L1L K4S281632M-L80 K4S281632M-TC K4S281632M-TC_L10 K4S281632M-TC_L1H K4S281632M-TC_L1L K4S281632M-TC_L80 K4S281632M-TC10 K4S281632M-TC1H K4S281632M-TC1L K4S281632M-TC80 K4S281632M-TL K4S281632M-TL10 K4S281632M-TL1H K4S281632M-TL1L K4S281632M-TC/L80 K4S281632M-TC/L1L K4S281632M-TC/L1H K4S281632M-TC/L10
OCR Text ...v. 0.0 Aug. 1999 K4S281632M ibis SPECIFICATION IOH Cha.racteristics (Pull-up) Voltage (V) 3.45 3.3 3.0 2.6 2.4 2.0 1.8 1.65 1.5 1.4 1.0 0.0 100MHz Min I (mA) 100MHz Max I (mA) -2.4 -27.3 -74.1 -129.2 -153.3 -197.0 -226.2 -248.0 -269.7...
Description 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL

File Size 85.96K  /  10 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S640432E-TC K4S640432E K4S640432E-L1H K4S640432E-L1L K4S640432E-L75
OCR Text ...v.0.1 Sept. 2001 K4S640432E ibis SPECIFICATION IOH Characteristics (Pull-up) Voltage (V) 3.45 3.3 3.0 2.6 2.4 2.0 1.8 1.65 1.5 1.4 1.0 0.0 100MHz 133MHz Min I (mA) 100MHz 133MHz Max I (mA) -2.4 -27.3 -74.1 -129.2 -153.3 -197.0 -226.2 ...
Description 4M x 4Bit x 4 Banks Synchronous DRAM Data Sheet

File Size 103.86K  /  10 Page

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For ibis Found Datasheets File :: 325    Search Time::1.344ms    
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