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Samsung Electronic
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| Part No. |
K4E661612EK4E641612E
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| OCR Text |
...refresh, ras -only refresh and hidden refresh capabilities. furthermore, self-refresh operation is available in l-version. this 4mx16 edo mode dram family is fabricat ed using samsung s advanced cmos process to realize high band-width, lo... |
| Description |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet
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| File Size |
393.88K /
36 Page |
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Download Datasheet
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Austin Semiconductor, Inc
AUSTIN SEMICONDUCTOR INC
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| Part No. |
MT4C4001JECJ-7/IT MT4C4001JECJ-7/XT MT4C4001JECG-8/IT MT4C4001JCZ-12/883C MT4C4001JECN-12/883C MT4C4001JECG-12/883C MT4C4001JCN-12/883C MT4C4001JECJ-12/883C MT4C4001JC-12/883C MT4C4001JECJ-12/IT MT4C4001JECJ-12/XT MT4C4001JC-12/XT MT4C4001JCZ-12/XT MT4C4001JECG-12/XT MT4C4001JCN-12/XT MT4C4001JCN-10/883C MT4C4001JC-10/883C MT4C4001JECG-10/883C MT4C4001JECN-10/883C MT4C4001JECJ-10/883C MT4C4001JCZ-10/883C MT4C4001JC-7/XT MT4C4001JC-10/XT MT4C4001JECN-10/XT MT4C4001JECN-12/IT MT4C4001JCN-12/IT MT4C4001JCN-10/IT MT4C4001JECN-10/IT MT4C4001JECN-12/XT MT4C4001JCN-10/XT MT4C4001JCZ-10/XT MT4C4001JECJ-10/XT MT4C4001JECG-10/XT MT4C4001JCZ-7/XT MT4C4001JECG-7/XT MT4C4001JECN-7/XT MT4C4001JCZ-10/IT MT4C4001JC-10/IT MT4C4001JC-12/IT MT4C4001JECN-8/XT MT4C4001JECJ-7/883C MT4C4001JCN-7/883C MT4C4001JECN-7/883C MT4C4001JECG-12/IT MT4C4001JECN-7/IT
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| OCR Text |
...LY, CAS\-BEFORE-RAS\ (CBR), and hidden * FAST PAGE MODE access cycle * CBR with WE\ a HIGH (JEDEC test mode capable via WCBR)
A0 A1 A2 A3 Vcc
9 10 11 12 13
18 17 16 15 14
A8 A7 A6 A5 A4
20-Pin DIP (CZ) OE\ 1 DQ3 3 Vss 5 2 CAS... |
| Description |
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 120 ns, CDSO20
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 70 ns, CDSO20
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 70 ns, CDIP20
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 120 ns, CZIP20
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| File Size |
245.89K /
20 Page |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH4V6445BXJJ-6S MH4V6445BXJJ-5S MH4V6445BXJJ-6 MH4V6445BXJJ-5
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| OCR Text |
...y-write, CAS before RAS refresh,hidden refresh capabilities. Early-write mode,OE and W to control output buffer impedance.
ADDRESS
Part No. MH4V6445BXJJ Row Add. Col Add. A0~A11 A0~A9 Refresh
/RAS only Ref,Normal R/W CBR Ref,hidden Ref... |
| Description |
HYPER PAGE MODE 268435456-BIT (4194304-WORD BY 64-BIT)DYNAMIC RAM
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| File Size |
150.74K /
26 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K4F641612C-TC K4F661612C-TC
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| OCR Text |
...S refresh, RAS-only refresh and hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width,... |
| Description |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
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| File Size |
850.63K /
35 Page |
View
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Download Datasheet |
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Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
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| Part No. |
MH4V64AXJJ MH4V64AXJJ-6S MH4V64AXJJ-5 MH4V644AXJJ MH4V64AXJJ-5S MH4V644AXJJ-5S MH4V644AXJJ-6 MH4V644AXJJ-6S
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| OCR Text |
...ly Ref,Normal R/W A0~A8 CBR Ref,hidden Ref
Refresh Cycle 8192/64ms 4096/64ms 4096/64ms
A0~A9
/RAS only Ref,Normal R/W CBR Ref,hidden Ref
APPLICATION
Main memory unit for computer,Microcomputer memory,Refresh memory for CRT.
*:... |
| Description |
MS3106B28-18S
Circular Connector; No. of Contacts:9; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:28; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:28-1 RoHS Compliant: No
FAST PAGE MODE 268435456-BIT (4194304-WORD BY 64-BIT)DYNAMIC RAM 快速页面模68435456位（4194304字，64位）动态随机存储器
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| File Size |
220.60K /
25 Page |
View
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Download Datasheet |
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Price and Availability
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